EU RoHS
|
Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
Obsolete |
HTS
|
8541.29.00.75 |
Automotive
|
Unknown |
PPAP
|
Unknown |
Configuration
|
Single |
Type
|
MOSFET |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Mode of Operation
|
2-Carrier W-CDMA |
Process Technology
|
LDMOS |
Maximum Drain Source Voltage (V)
|
65 |
Maximum Gate Source Voltage (V)
|
13 |
Maximum VSWR
|
10 |
Maximum Drain Source Resistance (mOhm)
|
2153@6.25V |
Typical Forward Transconductance (S)
|
0.91(Min) |
Output Power (W)
|
2(Typ) |
Typical Power Gain (dB)
|
17.7 |
Maximum Frequency (MHz)
|
3600 |
Minimum Frequency (MHz)
|
3400 |
Typical Drain Efficiency (%)
|
26 |
Operating Temperature-Min
|
-65 |
Operating Temperature-Max
|
225 |
Original Package
|
CDFM |
Pin Count
|
3 |
Terminal Form
|
Surface Mount |
Package Height
|
3.15(Max) |
Package Length
|
6.93(Max) |
Package Width
|
6.93(Max) |