|
EU RoHS
|
Compliant |
|
ECCN (US)
|
EAR99 |
|
Part Status
|
Active |
|
Configuration
|
Dual Common Source |
|
Channel Mode
|
Enhancement |
|
Channel Type
|
N |
|
Number of Elements per pcs
|
2 |
|
Mode of Operation
|
Pulsed RF |
|
Process Technology
|
LDMOS |
|
Maximum Drain Source Voltage (V)
|
65 |
|
Maximum Gate Source Voltage (V)
|
11 |
|
Maximum Gate Threshold Voltage (V)
|
2.4 |
|
Maximum VSWR
|
10 |
|
Maximum Gate Source Leakage Current (nA)
|
50 |
|
Maximum IDSS (uA)
|
1.4 |
|
Maximum Drain Source Resistance (mOhm)
|
140(Typ)@6.15V |
|
Typical Input Capacitance @ Vds (pF)
|
78@32V |
|
Typical Reverse Transfer Capacitance @ Vds (pF)
|
1.3@32V |
|
Typical Output Capacitance @ Vds (pF)
|
30@32V |
|
Output Power (W)
|
200 |
|
Typical Power Gain (dB)
|
18 |
|
Maximum Frequency (MHz)
|
1500 |
|
Minimum Frequency (MHz)
|
10 |
|
Typical Drain Efficiency (%)
|
70 |
|
Operating Temperature-Min
|
-65 |
|
Operating Temperature-Max
|
200 |
|
Original Package
|
CDFM |
|
Pin Count
|
5 |
|
Terminal Form
|
Screw |
|
Package Height
|
4.75(Max) |
|
Package Length
|
34.16(Max) |
|
Package Width
|
9.91(Max) |