AFT26P100-4WSR3

SKU: 60355

Manufacturer: NXP Semiconductors

Trans RF MOSFET N-CH 65V 5-Pin NI-780S T/R

260 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Obsolete
Automotive	No
PPAP	No
Configuration	Dual Common Source
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	2
Mode of Operation	1-Carrier W-CDMA
Process Technology	LDMOS
Maximum Drain Source Voltage (V)	65
Maximum Gate Source Voltage (V)	10
Maximum Gate Threshold Voltage (V)	1.6
Maximum VSWR	10
Maximum Gate Source Leakage Current (nA)	1000
Maximum IDSS (uA)	10
Output Power (W)	22
Typical Power Gain (dB)	15.1
Maximum Frequency (MHz)	2690
Minimum Frequency (MHz)	2496
Typical Drain Efficiency (%)	41
Operating Temperature-Min	-40
Operating Temperature-Max	225
Packing Method	Tape and Reel
Original Package	NI-780S
Pin Count	5
Terminal Form	Surface Mount
Package Height	4.32(Max)
Package Length	20.7(Max)
Package Width	9.91(Max)
PCB changed	5

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Obsolete
Automotive	No
PPAP	No
Configuration	Dual Common Source
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	2
Mode of Operation	1-Carrier W-CDMA
Process Technology	LDMOS
Maximum Drain Source Voltage (V)	65
Maximum Gate Source Voltage (V)	10
Maximum Gate Threshold Voltage (V)	1.6
Maximum VSWR	10
Maximum Gate Source Leakage Current (nA)	1000
Maximum IDSS (uA)	10
Output Power (W)	22
Typical Power Gain (dB)	15.1
Maximum Frequency (MHz)	2690
Minimum Frequency (MHz)	2496
Typical Drain Efficiency (%)	41
Operating Temperature-Min	-40
Operating Temperature-Max	225
Packing Method	Tape and Reel
Original Package	NI-780S
Pin Count	5
Terminal Form	Surface Mount
Package Height	4.32(Max)
Package Length	20.7(Max)
Package Width	9.91(Max)
PCB changed	5