AFT26H160-4S4R3

SKU: 81318

Manufacturer: NXP Semiconductors

Trans RF MOSFET N-CH 65V 9-Pin NI-880XS T/R

160 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	LTB
HTS	8541.29.00.75
Automotive	No
PPAP	No
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Mode of Operation	1-Carrier W-CDMA
Process Technology	LDMOS
Maximum Drain Source Voltage (V)	65
Maximum Gate Source Voltage (V)	10
Maximum Gate Threshold Voltage (V)	1.6
Maximum VSWR	10
Maximum Gate Source Leakage Current (nA)	1000
Maximum IDSS (uA)	10
Output Power (W)	32(Typ)
Typical Power Gain (dB)	14.9
Maximum Frequency (MHz)	2690
Minimum Frequency (MHz)	2496
Typical Drain Efficiency (%)	45.7
Operating Temperature-Min	-40
Operating Temperature-Max	225
Packing Method	Tape and Reel
Original Package	NI-880XS
Pin Count	9
Terminal Form	Surface Mount
Package Height	4.32(Max)
Package Length	23.24(Max)
Package Width	9.91(Max)

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	LTB
HTS	8541.29.00.75
Automotive	No
PPAP	No
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Mode of Operation	1-Carrier W-CDMA
Process Technology	LDMOS
Maximum Drain Source Voltage (V)	65
Maximum Gate Source Voltage (V)	10
Maximum Gate Threshold Voltage (V)	1.6
Maximum VSWR	10
Maximum Gate Source Leakage Current (nA)	1000
Maximum IDSS (uA)	10
Output Power (W)	32(Typ)
Typical Power Gain (dB)	14.9
Maximum Frequency (MHz)	2690
Minimum Frequency (MHz)	2496
Typical Drain Efficiency (%)	45.7
Operating Temperature-Min	-40
Operating Temperature-Max	225
Packing Method	Tape and Reel
Original Package	NI-880XS
Pin Count	9
Terminal Form	Surface Mount
Package Height	4.32(Max)
Package Length	23.24(Max)
Package Width	9.91(Max)