EU RoHS
|
Compliant with Exemption |
ECCN (US)
|
EAR99 |
Part Status
|
Obsolete |
HTS
|
8542.39.00.01 |
SVHC
|
Yes |
SVHC Exceeds Threshold
|
Yes |
Automotive
|
Unknown |
PPAP
|
Unknown |
Product Category
|
Power MOSFET |
Body Material
|
Si |
Configuration
|
Single Quad Drain Triple Source |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
25 |
Maximum Gate Source Voltage (V)
|
10 |
Maximum Gate Threshold Voltage (V)
|
1.7 |
Maximum Continuous Drain Current (A)
|
43 |
Maximum Gate Source Leakage Current (nA)
|
100 |
Maximum IDSS (uA)
|
1 |
Maximum Drain Source Resistance (mOhm)
|
13.5@10V |
Typical Gate Charge @ Vgs (nC)
|
5.5@4.5V |
Typical Input Capacitance @ Vds (pF)
|
400@12.5V |
Maximum Power Dissipation (mW)
|
2100 |
Typical Fall Time (ns)
|
2.1 |
Typical Rise Time (ns)
|
5.4 |
Typical Turn-Off Delay Time (ns)
|
4.2 |
Typical Turn-On Delay Time (ns)
|
2.2 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Packing Method
|
Tape and Reel |
Original Package
|
PDFN EP |
Pin Count
|
8 |
Terminal Form
|
Surface Mount |
Package Height
|
0.98(Max) |
Package Length
|
5 |
Package Width
|
6 |