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    MDP1901

    SKU: 98293
    Manufacturer: MagnaChip Semiconductor
    Trans MOSFET N-CH 100V 36A 3-Pin(3+Tab) TO-220 Tube
    10 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    Automotive Unknown
    PPAP Unknown
    Product Category Power MOSFET
    Configuration Single
    Process Technology TMOS
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 100
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 4
    Maximum Continuous Drain Current (A) 36
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 22@10V
    Typical Gate Charge @ Vgs (nC) 75@10V
    Typical Gate Charge @ 10V (nC) 75
    Typical Input Capacitance @ Vds (pF) 3045@30V
    Maximum Power Dissipation (mW) 34000
    Typical Fall Time (ns) 20
    Typical Rise Time (ns) 12
    Typical Turn-Off Delay Time (ns) 70
    Typical Turn-On Delay Time (ns) 25
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tube
    Original Package TO-220
    Pin Count 3
    Standard Package Method TO-220
    Terminal Form Through Hole
    Package Height 9.65(Max)
    Package Length 10.67(Max)
    Package Width 4.83(Max)
    PCB changed 3
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    Automotive Unknown
    PPAP Unknown
    Product Category Power MOSFET
    Configuration Single
    Process Technology TMOS
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 100
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 4
    Maximum Continuous Drain Current (A) 36
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 22@10V
    Typical Gate Charge @ Vgs (nC) 75@10V
    Typical Gate Charge @ 10V (nC) 75
    Typical Input Capacitance @ Vds (pF) 3045@30V
    Maximum Power Dissipation (mW) 34000
    Typical Fall Time (ns) 20
    Typical Rise Time (ns) 12
    Typical Turn-Off Delay Time (ns) 70
    Typical Turn-On Delay Time (ns) 25
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tube
    Original Package TO-220
    Pin Count 3
    Standard Package Method TO-220
    Terminal Form Through Hole
    Package Height 9.65(Max)
    Package Length 10.67(Max)
    Package Width 4.83(Max)
    PCB changed 3