EU RoHS
|
Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
Obsolete |
HTS
|
8541.29.00.95 |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Body Material
|
Si |
Configuration
|
Single |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
1200 |
Maximum Gate Source Voltage (V)
|
±30 |
Operating Junction Temperature (°C)
|
-55 to 150 |
Maximum Continuous Drain Current (A)
|
5 |
Maximum Drain Source Resistance (mOhm)
|
3800@10V |
Typical Gate Charge @ Vgs (nC)
|
43@10V |
Typical Gate Charge @ 10V (nC)
|
43 |
Typical Input Capacitance @ Vds (pF)
|
1385@25V |
Maximum Power Dissipation (mW)
|
225000 |
Typical Fall Time (ns)
|
6.9 |
Typical Rise Time (ns)
|
4.4 |
Typical Turn-Off Delay Time (ns)
|
24 |
Typical Turn-On Delay Time (ns)
|
7.4 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Packing Method
|
Tube |
Original Package
|
TO-220 |
Pin Count
|
3 |
Standard Package Method
|
TO-220 |
Terminal Form
|
Through Hole |
Package Height
|
9.19(Max) |
Package Length
|
10.26(Max) |
Package Width
|
4.72(Max) |
PCB changed
|
3 |
Tab
|
Tab |