2N6660

SKU: 7411

Manufacturer: Microchip Technology

Trans MOSFET N-CH Si 60V 0.41A 3-Pin TO-39 Bag

3410 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Process Technology	DMOS
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	2
Maximum Continuous Drain Current (A)	0.41
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	10
Maximum Drain Source Resistance (mOhm)	3000@10V
Typical Input Capacitance @ Vds (pF)	50(Max)@24V
Maximum Power Dissipation (mW)	6250
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Bag
Original Package	TO-39
Pin Count	3
Diameter	9.4(Max)
Terminal Form	Through Hole
Package Height	6.6(Max)
PCB changed	3

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Process Technology	DMOS
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	2
Maximum Continuous Drain Current (A)	0.41
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	10
Maximum Drain Source Resistance (mOhm)	3000@10V
Typical Input Capacitance @ Vds (pF)	50(Max)@24V
Maximum Power Dissipation (mW)	6250
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Bag
Original Package	TO-39
Pin Count	3
Diameter	9.4(Max)
Terminal Form	Through Hole
Package Height	6.6(Max)
PCB changed	3