IXTL2N450

SKU: 153682

Manufacturer: Littelfuse

Trans MOSFET N-CH Si 4.5KV 2A 3-Pin(3+Tab) ISOPLUS I5-PAK

3560 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant with Exemption
Part Status	Active
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	4500
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	6
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	2
Maximum Gate Source Leakage Current (nA)	200
Maximum IDSS (uA)	50
Maximum Drain Source Resistance (mOhm)	20000@10V
Typical Gate Charge @ Vgs (nC)	180@10V
Typical Gate Charge @ 10V (nC)	180
Typical Gate to Drain Charge (nC)	83@10V
Typical Gate to Source Charge (nC)	34
Typical Input Capacitance @ Vds (pF)	6860@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	105@25V
Minimum Gate Threshold Voltage (V)	3.5
Typical Output Capacitance (pF)	267
Maximum Power Dissipation (mW)	220000
Typical Fall Time (ns)	205
Typical Rise Time (ns)	34
Typical Turn-Off Delay Time (ns)	123
Typical Turn-On Delay Time (ns)	40
Operating Temperature-Min	-55
Operating Temperature-Max	150
Maximum Positive Gate Source Voltage (V)	20
Maximum Pulsed Drain Current @ TC=25°C (A)	8
Typical Gate Plateau Voltage (V)	6
Typical Reverse Recovery Time (ns)	1750
Maximum Diode Forward Voltage (V)	3
Original Package	ISOPLUS I5-PAK
Pin Count	3
Terminal Form	Through Hole
Package Height	26.42(Max)
Package Length	20.29(Max)
Package Width	5.21(Max)
PCB changed	3
Tab	Tab

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Products specifications

EU RoHS	Compliant with Exemption
Part Status	Active
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	4500
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	6
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	2
Maximum Gate Source Leakage Current (nA)	200
Maximum IDSS (uA)	50
Maximum Drain Source Resistance (mOhm)	20000@10V
Typical Gate Charge @ Vgs (nC)	180@10V
Typical Gate Charge @ 10V (nC)	180
Typical Gate to Drain Charge (nC)	83@10V
Typical Gate to Source Charge (nC)	34
Typical Input Capacitance @ Vds (pF)	6860@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	105@25V
Minimum Gate Threshold Voltage (V)	3.5
Typical Output Capacitance (pF)	267
Maximum Power Dissipation (mW)	220000
Typical Fall Time (ns)	205
Typical Rise Time (ns)	34
Typical Turn-Off Delay Time (ns)	123
Typical Turn-On Delay Time (ns)	40
Operating Temperature-Min	-55
Operating Temperature-Max	150
Maximum Positive Gate Source Voltage (V)	20
Maximum Pulsed Drain Current @ TC=25°C (A)	8
Typical Gate Plateau Voltage (V)	6
Typical Reverse Recovery Time (ns)	1750
Maximum Diode Forward Voltage (V)	3
Original Package	ISOPLUS I5-PAK
Pin Count	3
Terminal Form	Through Hole
Package Height	26.42(Max)
Package Length	20.29(Max)
Package Width	5.21(Max)
PCB changed	3
Tab	Tab