IXFN50N120SIC

SKU: 115309

Manufacturer: Littelfuse

Trans MOSFET N-CH SiC 1.2KV 47A 4-Pin SOT-227B Tube

3610 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	SiC
Configuration	Single Dual Source
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	1200
Maximum Gate Source Voltage (V)	20
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-40 to 175
Maximum Continuous Drain Current (A)	47
Maximum Gate Source Leakage Current (nA)	500
Maximum IDSS (uA)	200
Maximum Drain Source Resistance (mOhm)	50@20V
Typical Gate Charge @ Vgs (nC)	100@20V
Typical Gate to Drain Charge (nC)	36@20V
Typical Gate to Source Charge (nC)	22
Typical Reverse Recovery Charge (nC)	330
Typical Input Capacitance @ Vds (pF)	1900@1000V
Typical Reverse Transfer Capacitance @ Vds (pF)	13@1000V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	160
Operating Temperature-Min	-40
Operating Temperature-Max	150
Packing Method	Tube
Maximum Positive Gate Source Voltage (V)	20
Typical Diode Forward Voltage (V)	5.2
Typical Gate Plateau Voltage (V)	6.5
Typical Reverse Recovery Time (ns)	16
Typical Gate Threshold Voltage (V)	2.6
Maximum Gate Resistance (Ohm)	4.8
Original Package	SOT-227B
Pin Count	4
Standard Package Method	SOT
Terminal Form	Screw
Package Length	38.23(Max)
Package Width	25.42(Max)
PCB changed	4

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	SiC
Configuration	Single Dual Source
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	1200
Maximum Gate Source Voltage (V)	20
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-40 to 175
Maximum Continuous Drain Current (A)	47
Maximum Gate Source Leakage Current (nA)	500
Maximum IDSS (uA)	200
Maximum Drain Source Resistance (mOhm)	50@20V
Typical Gate Charge @ Vgs (nC)	100@20V
Typical Gate to Drain Charge (nC)	36@20V
Typical Gate to Source Charge (nC)	22
Typical Reverse Recovery Charge (nC)	330
Typical Input Capacitance @ Vds (pF)	1900@1000V
Typical Reverse Transfer Capacitance @ Vds (pF)	13@1000V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	160
Operating Temperature-Min	-40
Operating Temperature-Max	150
Packing Method	Tube
Maximum Positive Gate Source Voltage (V)	20
Typical Diode Forward Voltage (V)	5.2
Typical Gate Plateau Voltage (V)	6.5
Typical Reverse Recovery Time (ns)	16
Typical Gate Threshold Voltage (V)	2.6
Maximum Gate Resistance (Ohm)	4.8
Original Package	SOT-227B
Pin Count	4
Standard Package Method	SOT
Terminal Form	Screw
Package Length	38.23(Max)
Package Width	25.42(Max)
PCB changed	4