IRFR5305PBF

SKU: 132328

Manufacturer: International Rectifier

Trans MOSFET P-CH Si 55V 31A 3-Pin(2+Tab) DPAK Tube

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Netherlands

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Obsolete
HTS	8541.29.00.95
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single
Process Technology	HEXFET
Channel Mode	Enhancement
Channel Type	P
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	55
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	31
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	25
Maximum Drain Source Resistance (mOhm)	65@10V
Typical Gate Charge @ Vgs (nC)	63(Max)@10V
Typical Gate Charge @ 10V (nC)	63(Max)
Typical Gate to Drain Charge (nC)	29(Max)
Typical Gate to Source Charge (nC)	13(Max)
Typical Reverse Recovery Charge (nC)	170
Typical Input Capacitance @ Vds (pF)	1200@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	250@25V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	520
Maximum Power Dissipation (mW)	110000
Typical Fall Time (ns)	63
Typical Rise Time (ns)	66
Typical Turn-Off Delay Time (ns)	39
Typical Turn-On Delay Time (ns)	14
Operating Temperature-Min	-55
Operating Temperature-Max	175
Packing Method	Tube
Maximum Pulsed Drain Current @ TC=25°C (A)	110
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	50
Typical Gate Plateau Voltage (V)	5.9
Typical Reverse Recovery Time (ns)	71
Maximum Diode Forward Voltage (V)	1.3
Maximum Positive Gate Source Voltage (V)	20
Pin Count	3
Standard Package Method	TO-252
Original Package	DPAK
Terminal Form	Surface Mount
Package Height	2.39(Max)
Package Length	6.73(Max)
Package Width	6.22(Max)
PCB changed	2

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Obsolete
HTS	8541.29.00.95
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single
Process Technology	HEXFET
Channel Mode	Enhancement
Channel Type	P
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	55
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	31
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	25
Maximum Drain Source Resistance (mOhm)	65@10V
Typical Gate Charge @ Vgs (nC)	63(Max)@10V
Typical Gate Charge @ 10V (nC)	63(Max)
Typical Gate to Drain Charge (nC)	29(Max)
Typical Gate to Source Charge (nC)	13(Max)
Typical Reverse Recovery Charge (nC)	170
Typical Input Capacitance @ Vds (pF)	1200@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	250@25V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	520
Maximum Power Dissipation (mW)	110000
Typical Fall Time (ns)	63
Typical Rise Time (ns)	66
Typical Turn-Off Delay Time (ns)	39
Typical Turn-On Delay Time (ns)	14
Operating Temperature-Min	-55
Operating Temperature-Max	175
Packing Method	Tube
Maximum Pulsed Drain Current @ TC=25°C (A)	110
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	50
Typical Gate Plateau Voltage (V)	5.9
Typical Reverse Recovery Time (ns)	71
Maximum Diode Forward Voltage (V)	1.3
Maximum Positive Gate Source Voltage (V)	20
Pin Count	3
Standard Package Method	TO-252
Original Package	DPAK
Terminal Form	Surface Mount
Package Height	2.39(Max)
Package Length	6.73(Max)
Package Width	6.22(Max)
PCB changed	2