IRFR120NPBF

SKU: 82666

Manufacturer: International Rectifier

Trans MOSFET N-CH 100V 9.4A 3-Pin(2+Tab) DPAK Tube

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Obsolete
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Process Technology	HEXFET
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	9.4
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	25
Maximum Drain Source Resistance (mOhm)	210@10V
Typical Gate Charge @ Vgs (nC)	25(Max)@10V
Typical Gate Charge @ 10V (nC)	25(Max)
Typical Gate to Drain Charge (nC)	11(Max)
Typical Gate to Source Charge (nC)	4.8(Max)
Typical Reverse Recovery Charge (nC)	390
Typical Input Capacitance @ Vds (pF)	330@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	54@25V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	92
Maximum Power Dissipation (mW)	48000
Typical Fall Time (ns)	23
Typical Rise Time (ns)	23
Typical Turn-Off Delay Time (ns)	32
Typical Turn-On Delay Time (ns)	4.5
Operating Temperature-Min	-55
Operating Temperature-Max	175
Packing Method	Tube
Maximum Positive Gate Source Voltage (V)	20
Maximum Pulsed Drain Current @ TC=25°C (A)	38
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	50
Typical Gate Plateau Voltage (V)	5.2
Typical Reverse Recovery Time (ns)	99
Maximum Diode Forward Voltage (V)	1.3
Pin Count	3
Standard Package Method	TO-252
Original Package	DPAK
Terminal Form	Surface Mount
Package Height	2.39(Max)
Package Length	6.73(Max)
Package Width	6.22(Max)
PCB changed	2

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Obsolete
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Process Technology	HEXFET
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	9.4
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	25
Maximum Drain Source Resistance (mOhm)	210@10V
Typical Gate Charge @ Vgs (nC)	25(Max)@10V
Typical Gate Charge @ 10V (nC)	25(Max)
Typical Gate to Drain Charge (nC)	11(Max)
Typical Gate to Source Charge (nC)	4.8(Max)
Typical Reverse Recovery Charge (nC)	390
Typical Input Capacitance @ Vds (pF)	330@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	54@25V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	92
Maximum Power Dissipation (mW)	48000
Typical Fall Time (ns)	23
Typical Rise Time (ns)	23
Typical Turn-Off Delay Time (ns)	32
Typical Turn-On Delay Time (ns)	4.5
Operating Temperature-Min	-55
Operating Temperature-Max	175
Packing Method	Tube
Maximum Positive Gate Source Voltage (V)	20
Maximum Pulsed Drain Current @ TC=25°C (A)	38
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	50
Typical Gate Plateau Voltage (V)	5.2
Typical Reverse Recovery Time (ns)	99
Maximum Diode Forward Voltage (V)	1.3
Pin Count	3
Standard Package Method	TO-252
Original Package	DPAK
Terminal Form	Surface Mount
Package Height	2.39(Max)
Package Length	6.73(Max)
Package Width	6.22(Max)
PCB changed	2