IRFR120N

SKU: 153602

Manufacturer: Infineon Technologies AG

Trans MOSFET N-CH Si 100V 9.4A 3-Pin(2+Tab) DPAK T/R

17000 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Not Compliant
ECCN (US)	EAR99
Part Status	Obsolete
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single
Process Technology	HEXFET
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	9.4
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	25
Maximum Drain Source Resistance (mOhm)	210@10V
Typical Gate Charge @ Vgs (nC)	25(Max)@10V
Typical Gate Charge @ 10V (nC)	25(Max)
Typical Input Capacitance @ Vds (pF)	330@25V
Maximum Power Dissipation (mW)	48000
Typical Fall Time (ns)	23
Typical Rise Time (ns)	23
Typical Turn-Off Delay Time (ns)	32
Typical Turn-On Delay Time (ns)	4.5
Operating Temperature-Min	-55
Operating Temperature-Max	175
Packing Method	Tape and Reel
Maximum Positive Gate Source Voltage (V)	20
Maximum Diode Forward Voltage (V)	1.3
Original Package	DPAK
Pin Count	3
Standard Package Method	TO-252
Terminal Form	Surface Mount
Package Height	2.39(Max)
Package Length	6.73(Max)
Package Width	6.22(Max)
PCB changed	2

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Products specifications

EU RoHS	Not Compliant
ECCN (US)	EAR99
Part Status	Obsolete
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single
Process Technology	HEXFET
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	9.4
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	25
Maximum Drain Source Resistance (mOhm)	210@10V
Typical Gate Charge @ Vgs (nC)	25(Max)@10V
Typical Gate Charge @ 10V (nC)	25(Max)
Typical Input Capacitance @ Vds (pF)	330@25V
Maximum Power Dissipation (mW)	48000
Typical Fall Time (ns)	23
Typical Rise Time (ns)	23
Typical Turn-Off Delay Time (ns)	32
Typical Turn-On Delay Time (ns)	4.5
Operating Temperature-Min	-55
Operating Temperature-Max	175
Packing Method	Tape and Reel
Maximum Positive Gate Source Voltage (V)	20
Maximum Diode Forward Voltage (V)	1.3
Original Package	DPAK
Pin Count	3
Standard Package Method	TO-252
Terminal Form	Surface Mount
Package Height	2.39(Max)
Package Length	6.73(Max)
Package Width	6.22(Max)
PCB changed	2