EU RoHS
|
Not Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
Obsolete |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Body Material
|
Si |
Configuration
|
Dual Dual Drain |
Process Technology
|
HEXFET |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
2 |
Maximum Drain Source Voltage (V)
|
30 |
Maximum Gate Source Voltage (V)
|
±20 |
Maximum Gate Threshold Voltage (V)
|
1(Min) |
Maximum Continuous Drain Current (A)
|
2.4 |
Maximum Drain Source Resistance (mOhm)
|
135@10V |
Typical Gate Charge @ Vgs (nC)
|
7.8@10V |
Typical Gate Charge @ 10V (nC)
|
7.8 |
Typical Gate to Drain Charge (nC)
|
2.5 |
Typical Gate to Source Charge (nC)
|
1.2 |
Typical Reverse Recovery Charge (nC)
|
48 |
Typical Input Capacitance @ Vds (pF)
|
210@25V |
Typical Output Capacitance (pF)
|
80 |
Maximum Power Dissipation (mW)
|
1250 |
Typical Fall Time (ns)
|
5.3 |
Typical Rise Time (ns)
|
10 |
Typical Turn-Off Delay Time (ns)
|
12 |
Typical Turn-On Delay Time (ns)
|
4.7 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Packing Method
|
Tape and Reel |
Original Package
|
Micro |
Pin Count
|
8 |
Terminal Form
|
Surface Mount |
Package Height
|
0.86 |
Package Length
|
3 |
Package Width
|
3 |