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    IRF7205TR

    SKU: 103850
    Manufacturer: International Rectifier
    Trans MOSFET P-CH Si 30V 4.6A 8-Pin SOIC N T/R
    14270 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Not Compliant
    ECCN (US) EAR99
    Part Status Obsolete
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Body Material Si
    Configuration Single Quad Drain Triple Source
    Process Technology HEXFET
    Channel Mode Enhancement
    Channel Type P
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 30
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 3
    Maximum Continuous Drain Current (A) 4.6
    Maximum Drain Source Resistance (mOhm) 70@10V
    Typical Gate Charge @ Vgs (nC) 27@10V
    Typical Gate Charge @ 10V (nC) 27
    Typical Gate to Drain Charge (nC) 7.5
    Typical Gate to Source Charge (nC) 5.2
    Typical Reverse Recovery Charge (nC) 100
    Typical Input Capacitance @ Vds (pF) 870@10V
    Typical Output Capacitance (pF) 720
    Maximum Power Dissipation (mW) 2500
    Typical Fall Time (ns) 71
    Typical Rise Time (ns) 21
    Typical Turn-Off Delay Time (ns) 97
    Typical Turn-On Delay Time (ns) 14
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Original Package SOIC N
    Pin Count 8
    Standard Package Method SOP
    Terminal Form Surface Mount
    Package Height 1.5(Max)
    Package Length 5(Max)
    Package Width 4(Max)
    PCB changed 8
    Products specifications
    EU RoHS Not Compliant
    ECCN (US) EAR99
    Part Status Obsolete
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Body Material Si
    Configuration Single Quad Drain Triple Source
    Process Technology HEXFET
    Channel Mode Enhancement
    Channel Type P
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 30
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 3
    Maximum Continuous Drain Current (A) 4.6
    Maximum Drain Source Resistance (mOhm) 70@10V
    Typical Gate Charge @ Vgs (nC) 27@10V
    Typical Gate Charge @ 10V (nC) 27
    Typical Gate to Drain Charge (nC) 7.5
    Typical Gate to Source Charge (nC) 5.2
    Typical Reverse Recovery Charge (nC) 100
    Typical Input Capacitance @ Vds (pF) 870@10V
    Typical Output Capacitance (pF) 720
    Maximum Power Dissipation (mW) 2500
    Typical Fall Time (ns) 71
    Typical Rise Time (ns) 21
    Typical Turn-Off Delay Time (ns) 97
    Typical Turn-On Delay Time (ns) 14
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Original Package SOIC N
    Pin Count 8
    Standard Package Method SOP
    Terminal Form Surface Mount
    Package Height 1.5(Max)
    Package Length 5(Max)
    Package Width 4(Max)
    PCB changed 8