IRF7205

SKU: 132313

Manufacturer: International Rectifier

Trans MOSFET P-CH Si 30V 4.6A 8-Pin SOIC N T/R

7050 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Not Compliant
ECCN (US)	EAR99
Part Status	Obsolete
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single Quad Drain Triple Source
Process Technology	HEXFET
Channel Mode	Enhancement
Channel Type	P
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	30
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	3
Maximum Continuous Drain Current (A)	4.6
Maximum Drain Source Resistance (mOhm)	70@10V
Typical Gate Charge @ Vgs (nC)	27@10V
Typical Gate Charge @ 10V (nC)	27
Typical Gate to Drain Charge (nC)	7.5
Typical Gate to Source Charge (nC)	5.2
Typical Reverse Recovery Charge (nC)	100
Typical Input Capacitance @ Vds (pF)	870@10V
Typical Output Capacitance (pF)	720
Maximum Power Dissipation (mW)	2500
Typical Fall Time (ns)	71
Typical Rise Time (ns)	21
Typical Turn-Off Delay Time (ns)	97
Typical Turn-On Delay Time (ns)	14
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Original Package	SOIC N
Pin Count	8
Standard Package Method	SOP
Terminal Form	Surface Mount
Package Height	1.5(Max)
Package Length	5(Max)
Package Width	4(Max)
PCB changed	8

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Products specifications

EU RoHS	Not Compliant
ECCN (US)	EAR99
Part Status	Obsolete
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single Quad Drain Triple Source
Process Technology	HEXFET
Channel Mode	Enhancement
Channel Type	P
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	30
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	3
Maximum Continuous Drain Current (A)	4.6
Maximum Drain Source Resistance (mOhm)	70@10V
Typical Gate Charge @ Vgs (nC)	27@10V
Typical Gate Charge @ 10V (nC)	27
Typical Gate to Drain Charge (nC)	7.5
Typical Gate to Source Charge (nC)	5.2
Typical Reverse Recovery Charge (nC)	100
Typical Input Capacitance @ Vds (pF)	870@10V
Typical Output Capacitance (pF)	720
Maximum Power Dissipation (mW)	2500
Typical Fall Time (ns)	71
Typical Rise Time (ns)	21
Typical Turn-Off Delay Time (ns)	97
Typical Turn-On Delay Time (ns)	14
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Original Package	SOIC N
Pin Count	8
Standard Package Method	SOP
Terminal Form	Surface Mount
Package Height	1.5(Max)
Package Length	5(Max)
Package Width	4(Max)
PCB changed	8