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    IRFS7530-7PPBF

    SKU: 146436
    Manufacturer: Infineon Technologies AG
    Trans MOSFET N-CH Si 60V 338A 7-Pin(6+Tab) D2PAK Tube
    2850 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Obsolete
    HTS 8541.21.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Body Material Si
    Configuration Single Quint Source
    Process Technology HEXFET
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 60
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 3.7
    Maximum Continuous Drain Current (A) 338
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 1.4@10V
    Typical Gate Charge @ Vgs (nC) 236@10V
    Typical Gate Charge @ 10V (nC) 236
    Typical Input Capacitance @ Vds (pF) 12960@25V
    Maximum Power Dissipation (mW) 375000
    Typical Fall Time (ns) 79
    Typical Rise Time (ns) 102
    Typical Turn-Off Delay Time (ns) 168
    Typical Turn-On Delay Time (ns) 24
    Operating Temperature-Min -55
    Operating Temperature-Max 175
    Packing Method Tube
    Original Package D2PAK
    Pin Count 7
    Standard Package Method TO-263
    Terminal Form Surface Mount
    Package Height 4.83(Max)
    Package Length 10.67(Max)
    Package Width 9.65(Max)
    PCB changed 6
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Obsolete
    HTS 8541.21.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Body Material Si
    Configuration Single Quint Source
    Process Technology HEXFET
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 60
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 3.7
    Maximum Continuous Drain Current (A) 338
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 1.4@10V
    Typical Gate Charge @ Vgs (nC) 236@10V
    Typical Gate Charge @ 10V (nC) 236
    Typical Input Capacitance @ Vds (pF) 12960@25V
    Maximum Power Dissipation (mW) 375000
    Typical Fall Time (ns) 79
    Typical Rise Time (ns) 102
    Typical Turn-Off Delay Time (ns) 168
    Typical Turn-On Delay Time (ns) 24
    Operating Temperature-Min -55
    Operating Temperature-Max 175
    Packing Method Tube
    Original Package D2PAK
    Pin Count 7
    Standard Package Method TO-263
    Terminal Form Surface Mount
    Package Height 4.83(Max)
    Package Length 10.67(Max)
    Package Width 9.65(Max)
    PCB changed 6