IRF7832TRPBF

SKU: 82655

Manufacturer: Infineon Technologies AG

Trans MOSFET N-CH 30V 20A 8-Pin SOIC N T/R

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Netherlands

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single Quad Drain Triple Source
Process Technology	HEXFET
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	30
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	2.32
Operating Junction Temperature (°C)	-55 to 155
Maximum Continuous Drain Current (A)	20
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	4@10V
Typical Gate Charge @ Vgs (nC)	34@4.5V
Typical Gate to Drain Charge (nC)	12
Typical Gate to Source Charge (nC)	8.6
Typical Reverse Recovery Charge (nC)	39
Typical Switch Charge (nC)	14.9
Typical Input Capacitance @ Vds (pF)	4310@15V
Typical Reverse Transfer Capacitance @ Vds (pF)	450@15V
Minimum Gate Threshold Voltage (V)	1.39
Typical Output Capacitance (pF)	990
Maximum Power Dissipation (mW)	2500
Typical Fall Time (ns)	13
Typical Rise Time (ns)	6.7
Typical Turn-Off Delay Time (ns)	21
Typical Turn-On Delay Time (ns)	12
Operating Temperature-Min	-55
Operating Temperature-Max	155
Packing Method	Tape and Reel
Maximum Pulsed Drain Current @ TC=25°C (A)	160
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	50
Typical Gate Plateau Voltage (V)	2.8
Typical Reverse Recovery Time (ns)	41
Maximum Diode Forward Voltage (V)	1
Maximum Gate Resistance (Ohm)	2.4
Maximum Positive Gate Source Voltage (V)	20
Pin Count	8
Standard Package Method	SOP
Original Package	SOIC N
Terminal Form	Surface Mount
Package Height	1.5(Max)
Package Length	5(Max)
Package Width	4(Max)
PCB changed	8

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single Quad Drain Triple Source
Process Technology	HEXFET
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	30
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	2.32
Operating Junction Temperature (°C)	-55 to 155
Maximum Continuous Drain Current (A)	20
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	4@10V
Typical Gate Charge @ Vgs (nC)	34@4.5V
Typical Gate to Drain Charge (nC)	12
Typical Gate to Source Charge (nC)	8.6
Typical Reverse Recovery Charge (nC)	39
Typical Switch Charge (nC)	14.9
Typical Input Capacitance @ Vds (pF)	4310@15V
Typical Reverse Transfer Capacitance @ Vds (pF)	450@15V
Minimum Gate Threshold Voltage (V)	1.39
Typical Output Capacitance (pF)	990
Maximum Power Dissipation (mW)	2500
Typical Fall Time (ns)	13
Typical Rise Time (ns)	6.7
Typical Turn-Off Delay Time (ns)	21
Typical Turn-On Delay Time (ns)	12
Operating Temperature-Min	-55
Operating Temperature-Max	155
Packing Method	Tape and Reel
Maximum Pulsed Drain Current @ TC=25°C (A)	160
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	50
Typical Gate Plateau Voltage (V)	2.8
Typical Reverse Recovery Time (ns)	41
Maximum Diode Forward Voltage (V)	1
Maximum Gate Resistance (Ohm)	2.4
Maximum Positive Gate Source Voltage (V)	20
Pin Count	8
Standard Package Method	SOP
Original Package	SOIC N
Terminal Form	Surface Mount
Package Height	1.5(Max)
Package Length	5(Max)
Package Width	4(Max)
PCB changed	8