EU RoHS
|
Not Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
Obsolete |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Configuration
|
Single |
Process Technology
|
HEXFET |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
500 |
Maximum Gate Source Voltage (V)
|
±20 |
Maximum Continuous Drain Current (A)
|
21 |
Maximum Drain Source Resistance (mOhm)
|
310@10V |
Typical Gate Charge @ Vgs (nC)
|
190(Max)@10V |
Typical Gate Charge @ 10V (nC)
|
190(Max) |
Typical Input Capacitance @ Vds (pF)
|
4300@25V |
Maximum Power Dissipation (mW)
|
300000 |
Typical Fall Time (ns)
|
98(Max) |
Typical Rise Time (ns)
|
120(Max) |
Typical Turn-Off Delay Time (ns)
|
130(Max) |
Typical Turn-On Delay Time (ns)
|
35(Max) |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Original Package
|
TO-3 |
Pin Count
|
3 |
Terminal Form
|
Through Hole |
Package Height
|
7.74(Max) |
Package Length
|
39.37(Max) |
Package Width
|
25.53(Max) |
PCB changed
|
2 |
Tab
|
Tab |