EU RoHS
|
Not Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
Active |
HTS
|
8541.21.00.95 |
SVHC
|
Yes |
SVHC Exceeds Threshold
|
Yes |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Process Technology
|
HEXFET |
Configuration
|
Single |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
500 |
Maximum Gate Source Voltage (V)
|
±20 |
Maximum Continuous Drain Current (A)
|
12 |
Maximum Drain Source Resistance (mOhm)
|
500@10V |
Typical Gate Charge @ Vgs (nC)
|
120(Max)@10V |
Typical Gate Charge @ 10V (nC)
|
120(Max) |
Typical Input Capacitance @ Vds (pF)
|
2700@25V |
Maximum Power Dissipation (mW)
|
150000 |
Typical Fall Time (ns)
|
130 |
Typical Rise Time (ns)
|
190 |
Typical Turn-Off Delay Time (ns)
|
170 |
Typical Turn-On Delay Time (ns)
|
35 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Original Package
|
TO-3 |
Pin Count
|
3 |
Standard Package Method
|
TO-204-AA |
Terminal Form
|
Through Hole |
Package Height
|
7.74(Max) |
Package Length
|
39.37(Max) |
Package Width
|
25.53(Max) |
PCB changed
|
2 |
Tab
|
Tab |