IPW60R080P7

SKU: 19077

Manufacturer: Infineon Technologies AG

Trans MOSFET N-CH 600V 37A

320 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	600
Maximum Gate Source Voltage (V)	20
Maximum Continuous Drain Current (A)	37
Maximum Drain Source Resistance (mOhm)	80@10V
Typical Gate Charge @ Vgs (nC)	51@10V
Typical Gate Charge @ 10V (nC)	51
Typical Input Capacitance @ Vds (pF)	2180@400V
Maximum Power Dissipation (mW)	129000
Typical Fall Time (ns)	5
Typical Rise Time (ns)	10
Typical Turn-Off Delay Time (ns)	70
Typical Turn-On Delay Time (ns)	15
Operating Temperature-Min	-55

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	600
Maximum Gate Source Voltage (V)	20
Maximum Continuous Drain Current (A)	37
Maximum Drain Source Resistance (mOhm)	80@10V
Typical Gate Charge @ Vgs (nC)	51@10V
Typical Gate Charge @ 10V (nC)	51
Typical Input Capacitance @ Vds (pF)	2180@400V
Maximum Power Dissipation (mW)	129000
Typical Fall Time (ns)	5
Typical Rise Time (ns)	10
Typical Turn-Off Delay Time (ns)	70
Typical Turn-On Delay Time (ns)	15
Operating Temperature-Min	-55