IPW60R037P7

SKU: 68636

Manufacturer: Infineon Technologies AG

MOSFET 600V P7 Power Transistor

1860 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
Part Status	Active
Product Category	Power MOSFET
Configuration	Single
Process Technology	CoolMOS P7
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	600
Maximum Gate Source Voltage (V)	20
Maximum Gate Threshold Voltage (V)	4
Maximum Continuous Drain Current (A)	76
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	37@10V
Typical Gate Charge @ Vgs (nC)	121@10V
Typical Gate Charge @ 10V (nC)	121
Typical Input Capacitance @ Vds (pF)	5243@400V
Maximum Power Dissipation (mW)	255000
Typical Fall Time (ns)	4
Typical Rise Time (ns)	21
Typical Turn-Off Delay Time (ns)	90
Typical Turn-On Delay Time (ns)	22
Operating Temperature-Min	-55

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Products specifications

EU RoHS	Compliant
Part Status	Active
Product Category	Power MOSFET
Configuration	Single
Process Technology	CoolMOS P7
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	600
Maximum Gate Source Voltage (V)	20
Maximum Gate Threshold Voltage (V)	4
Maximum Continuous Drain Current (A)	76
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	37@10V
Typical Gate Charge @ Vgs (nC)	121@10V
Typical Gate Charge @ 10V (nC)	121
Typical Input Capacitance @ Vds (pF)	5243@400V
Maximum Power Dissipation (mW)	255000
Typical Fall Time (ns)	4
Typical Rise Time (ns)	21
Typical Turn-Off Delay Time (ns)	90
Typical Turn-On Delay Time (ns)	22
Operating Temperature-Min	-55