IPT004N03L

SKU: 118076

Manufacturer: Infineon Technologies AG

Trans MOSFET N-CH 30V 72A Automotive 9-Pin(8+Tab) HSOF T/R

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1670 parts IN STOCK

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Netherlands

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Rohs State : Need to verify

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	NRND
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	Unknown
PPAP	Unknown
Product Category	Power MOSFET
Configuration	Single Seven Source
Process Technology	OptiMOS
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	30
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	2.2
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	72
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	0.4@10V
Typical Gate Charge @ Vgs (nC)	122@4.5V
Typical Gate to Drain Charge (nC)	28
Typical Gate to Source Charge (nC)	40
Typical Reverse Recovery Charge (nC)	100
Typical Switch Charge (nC)	38
Typical Input Capacitance @ Vds (pF)	18000@15V
Typical Reverse Transfer Capacitance @ Vds (pF)	590@15V
Minimum Gate Threshold Voltage (V)	0.7
Typical Output Capacitance (pF)	5400
Maximum Power Dissipation (mW)	3800
Typical Fall Time (ns)	37
Typical Rise Time (ns)	17
Typical Turn-Off Delay Time (ns)	149
Typical Turn-On Delay Time (ns)	30
Operating Temperature-Min	-55
Operating Temperature-Max	175
Packing Method	Tape and Reel
Maximum Power Dissipation on PCB @ TC=25°C (W)	3.8
Maximum Pulsed Drain Current @ TC=25°C (A)	1200
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	62
Typical Diode Forward Voltage (V)	0.83
Typical Gate Plateau Voltage (V)	2.2
Maximum Diode Forward Voltage (V)	1
Minimum Gate Resistance (Ohm)	1.4
Maximum Gate Resistance (Ohm)	5.4
Maximum Positive Gate Source Voltage (V)	20
Maximum Continuous Drain Current on PCB @ TC=25°C (A)	72
Original Package	HSOF
Pin Count	9
Standard Package Method	HSOF
Terminal Form	Surface Mount
Package Height	2.3
Package Length	9.9
Package Width	10.38
PCB changed	8
Tab	Tab

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	NRND
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	Unknown
PPAP	Unknown
Product Category	Power MOSFET
Configuration	Single Seven Source
Process Technology	OptiMOS
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	30
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	2.2
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	72
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	0.4@10V
Typical Gate Charge @ Vgs (nC)	122@4.5V
Typical Gate to Drain Charge (nC)	28
Typical Gate to Source Charge (nC)	40
Typical Reverse Recovery Charge (nC)	100
Typical Switch Charge (nC)	38
Typical Input Capacitance @ Vds (pF)	18000@15V
Typical Reverse Transfer Capacitance @ Vds (pF)	590@15V
Minimum Gate Threshold Voltage (V)	0.7
Typical Output Capacitance (pF)	5400
Maximum Power Dissipation (mW)	3800
Typical Fall Time (ns)	37
Typical Rise Time (ns)	17
Typical Turn-Off Delay Time (ns)	149
Typical Turn-On Delay Time (ns)	30
Operating Temperature-Min	-55
Operating Temperature-Max	175
Packing Method	Tape and Reel
Maximum Power Dissipation on PCB @ TC=25°C (W)	3.8
Maximum Pulsed Drain Current @ TC=25°C (A)	1200
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	62
Typical Diode Forward Voltage (V)	0.83
Typical Gate Plateau Voltage (V)	2.2
Maximum Diode Forward Voltage (V)	1
Minimum Gate Resistance (Ohm)	1.4
Maximum Gate Resistance (Ohm)	5.4
Maximum Positive Gate Source Voltage (V)	20
Maximum Continuous Drain Current on PCB @ TC=25°C (A)	72
Original Package	HSOF
Pin Count	9
Standard Package Method	HSOF
Terminal Form	Surface Mount
Package Height	2.3
Package Length	9.9
Package Width	10.38
PCB changed	8
Tab	Tab