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    IPS65R950C6

    SKU: 96795
    Manufacturer: Infineon Technologies AG
    Trans MOSFET N-CH 700V 4.5A 3-Pin(3+Tab) TO-251 Tube
    3140 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status Obsolete
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single
    Process Technology CoolMOS
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 700
    Maximum Gate Source Voltage (V) 20
    Maximum Gate Threshold Voltage (V) 3.5
    Maximum Continuous Drain Current (A) 4.5
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 950@10V
    Typical Gate Charge @ Vgs (nC) 15.3@10V
    Typical Gate Charge @ 10V (nC) 15.3
    Typical Input Capacitance @ Vds (pF) 328@100V
    Maximum Power Dissipation (mW) 37000
    Typical Fall Time (ns) 13.6
    Typical Rise Time (ns) 5.2
    Typical Turn-Off Delay Time (ns) 41
    Typical Turn-On Delay Time (ns) 6.6
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tube
    Original Package TO-251
    Pin Count 3
    Standard Package Method TO-251
    Terminal Form Through Hole
    Package Height 6.22
    Package Length 6.5
    Package Width 2.3
    PCB changed 3
    Tab Tab
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status Obsolete
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single
    Process Technology CoolMOS
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 700
    Maximum Gate Source Voltage (V) 20
    Maximum Gate Threshold Voltage (V) 3.5
    Maximum Continuous Drain Current (A) 4.5
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 950@10V
    Typical Gate Charge @ Vgs (nC) 15.3@10V
    Typical Gate Charge @ 10V (nC) 15.3
    Typical Input Capacitance @ Vds (pF) 328@100V
    Maximum Power Dissipation (mW) 37000
    Typical Fall Time (ns) 13.6
    Typical Rise Time (ns) 5.2
    Typical Turn-Off Delay Time (ns) 41
    Typical Turn-On Delay Time (ns) 6.6
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tube
    Original Package TO-251
    Pin Count 3
    Standard Package Method TO-251
    Terminal Form Through Hole
    Package Height 6.22
    Package Length 6.5
    Package Width 2.3
    PCB changed 3
    Tab Tab