EU RoHS
|
Compliant with Exemption |
ECCN (US)
|
EAR99 |
Part Status
|
Obsolete |
SVHC
|
Yes |
SVHC Exceeds Threshold
|
Yes |
Automotive
|
Yes |
PPAP
|
Unknown |
Product Category
|
Power MOSFET |
Body Material
|
Si |
Configuration
|
Single |
Process Technology
|
HEXFET |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
40 |
Maximum Gate Source Voltage (V)
|
±16 |
Maximum Gate Threshold Voltage (V)
|
2.5 |
Maximum Continuous Drain Current (A)
|
130 |
Maximum Gate Source Leakage Current (nA)
|
100 |
Maximum IDSS (uA)
|
20 |
Maximum Drain Source Resistance (mOhm)
|
4.9@10V |
Typical Gate Charge @ Vgs (nC)
|
40@4.5V |
Typical Input Capacitance @ Vds (pF)
|
3810@25V |
Maximum Power Dissipation (mW)
|
140000 |
Typical Fall Time (ns)
|
50 |
Typical Rise Time (ns)
|
140 |
Typical Turn-Off Delay Time (ns)
|
33 |
Typical Turn-On Delay Time (ns)
|
25 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
175 |
Supplier Temperature Grade
|
Automotive |
Packing Method
|
Tube |
Pin Count
|
3 |
Standard Package Method
|
TO-252 |
Original Package
|
DPAK |
Terminal Form
|
Surface Mount |
Package Height
|
2.39(Max) |
Package Length
|
6.73(Max) |
Package Width
|
6.22(Max) |
PCB changed
|
2 |