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    2N6798

    SKU: 7414
    Manufacturer: Infineon Technologies AG
    Trans MOSFET N-CH 200V 5.5A 3-Pin TO-39
    380 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Not Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.10.00.80
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 200
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 4
    Maximum Continuous Drain Current (A) 5.5
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 25
    Maximum Drain Source Resistance (mOhm) 420@10V
    Typical Gate Charge @ Vgs (nC) 42.1(Max)@10V
    Typical Gate Charge @ 10V (nC) 42.1(Max)
    Maximum Power Dissipation (mW) 25000
    Typical Fall Time (ns) 40(Max)
    Typical Rise Time (ns) 50(Max)
    Typical Turn-Off Delay Time (ns) 50(Max)
    Typical Turn-On Delay Time (ns) 30(Max)
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Original Package TO-39
    Pin Count 3
    Standard Package Method TO-205-AF
    Diameter 9.22(Max)
    Terminal Form Through Hole
    Package Height 4.54(Max)
    PCB changed 3
    Products specifications
    EU RoHS Not Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.10.00.80
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 200
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 4
    Maximum Continuous Drain Current (A) 5.5
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 25
    Maximum Drain Source Resistance (mOhm) 420@10V
    Typical Gate Charge @ Vgs (nC) 42.1(Max)@10V
    Typical Gate Charge @ 10V (nC) 42.1(Max)
    Maximum Power Dissipation (mW) 25000
    Typical Fall Time (ns) 40(Max)
    Typical Rise Time (ns) 50(Max)
    Typical Turn-Off Delay Time (ns) 50(Max)
    Typical Turn-On Delay Time (ns) 30(Max)
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Original Package TO-39
    Pin Count 3
    Standard Package Method TO-205-AF
    Diameter 9.22(Max)
    Terminal Form Through Hole
    Package Height 4.54(Max)
    PCB changed 3