|
EU RoHS
|
Not Compliant |
|
ECCN (US)
|
EAR99 |
|
Part Status
|
Active |
|
HTS
|
8541.10.00.80 |
|
Automotive
|
No |
|
PPAP
|
No |
|
Product Category
|
Power MOSFET |
|
Configuration
|
Single Hex Drain Octal Source Dual Gate |
|
Process Technology
|
HEXFET |
|
Channel Mode
|
Enhancement |
|
Channel Type
|
N |
|
Number of Elements per pcs
|
1 |
|
Maximum Drain Source Voltage (V)
|
100 |
|
Maximum Gate Source Voltage (V)
|
±20 |
|
Maximum Continuous Drain Current (A)
|
8 |
|
Maximum Drain Source Resistance (mOhm)
|
207@10V |
|
Typical Gate Charge @ Vgs (nC)
|
29(Max)@10V |
|
Typical Gate Charge @ 10V (nC)
|
29(Max) |
|
Typical Input Capacitance @ Vds (pF)
|
660@25V |
|
Maximum Power Dissipation (mW)
|
25000 |
|
Typical Fall Time (ns)
|
45(Max) |
|
Typical Rise Time (ns)
|
75(Max) |
|
Typical Turn-Off Delay Time (ns)
|
40(Max) |
|
Typical Turn-On Delay Time (ns)
|
30(Max) |
|
Operating Temperature-Min
|
-55 |
|
Operating Temperature-Max
|
150 |
|
Supplier Temperature Grade
|
Military |
|
Original Package
|
LLCC |
|
Pin Count
|
18 |
|
Standard Package Method
|
LLCC |
|
Terminal Form
|
Surface Mount |
|
Package Height
|
3.22(Max) |
|
Package Length
|
9.14(Max) |
|
Package Width
|
7.49(Max) |
|
PCB changed
|
18 |