DMN62D1LFB-7B

SKU: 32724

Manufacturer: Diodes Incorporated

Trans MOSFET N-CH 60V 0.407A 3-Pin X1-DFN T/R

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.21.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	1
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	0.407
Maximum Gate Source Leakage Current (nA)	2000
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	2000@4V
Typical Gate Charge @ Vgs (nC)	0.45@4.5V
Typical Gate to Drain Charge (nC)	0.08
Typical Gate to Source Charge (nC)	0.08
Typical Input Capacitance @ Vds (pF)	32@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	2.9@25V
Minimum Gate Threshold Voltage (V)	0.6
Typical Output Capacitance (pF)	4.4
Maximum Power Dissipation (mW)	500
Typical Fall Time (ns)	16.3
Typical Rise Time (ns)	3.4
Typical Turn-Off Delay Time (ns)	26.4
Typical Turn-On Delay Time (ns)	3.4
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Maximum Positive Gate Source Voltage (V)	20
Maximum Continuous Drain Current on PCB @ TC=25°C (A)	0.407
Maximum Power Dissipation on PCB @ TC=25°C (W)	0.5
Maximum Pulsed Drain Current @ TC=25°C (A)	1
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	251
Typical Diode Forward Voltage (V)	0.9
Typical Gate Plateau Voltage (V)	1.8
Maximum Diode Forward Voltage (V)	1.3
Maximum Gate Resistance (Ohm)	250
Original Package	X1-DFN
Pin Count	3
Standard Package Method	DFN
Terminal Form	Surface Mount
Package Height	0.47
Package Length	0.6
Package Width	1
PCB changed	3

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.21.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	1
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	0.407
Maximum Gate Source Leakage Current (nA)	2000
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	2000@4V
Typical Gate Charge @ Vgs (nC)	0.45@4.5V
Typical Gate to Drain Charge (nC)	0.08
Typical Gate to Source Charge (nC)	0.08
Typical Input Capacitance @ Vds (pF)	32@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	2.9@25V
Minimum Gate Threshold Voltage (V)	0.6
Typical Output Capacitance (pF)	4.4
Maximum Power Dissipation (mW)	500
Typical Fall Time (ns)	16.3
Typical Rise Time (ns)	3.4
Typical Turn-Off Delay Time (ns)	26.4
Typical Turn-On Delay Time (ns)	3.4
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Maximum Positive Gate Source Voltage (V)	20
Maximum Continuous Drain Current on PCB @ TC=25°C (A)	0.407
Maximum Power Dissipation on PCB @ TC=25°C (W)	0.5
Maximum Pulsed Drain Current @ TC=25°C (A)	1
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	251
Typical Diode Forward Voltage (V)	0.9
Typical Gate Plateau Voltage (V)	1.8
Maximum Diode Forward Voltage (V)	1.3
Maximum Gate Resistance (Ohm)	250
Original Package	X1-DFN
Pin Count	3
Standard Package Method	DFN
Terminal Form	Surface Mount
Package Height	0.47
Package Length	0.6
Package Width	1
PCB changed	3