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    DMN3190LDW-7

    SKU: 103383
    Manufacturer: Diodes Incorporated
    Trans MOSFET N-CH 30V 1A 6-Pin SOT-363 T/R
    115940 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Dual
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 2
    Maximum Drain Source Voltage (V) 30
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 2.8
    Operating Junction Temperature (°C) -55 to 150
    Maximum Continuous Drain Current (A) 1
    Maximum Gate Source Leakage Current (nA) 10000
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 190@10V
    Typical Gate Charge @ Vgs (nC) 2@10V
    Typical Gate Charge @ 10V (nC) 2
    Typical Gate to Drain Charge (nC) 0.3
    Typical Gate to Source Charge (nC) 0.3
    Typical Input Capacitance @ Vds (pF) 87@20V
    Typical Reverse Transfer Capacitance @ Vds (pF) 12@20V
    Minimum Gate Threshold Voltage (V) 1.5
    Typical Output Capacitance (pF) 17
    Maximum Power Dissipation (mW) 400
    Typical Fall Time (ns) 15.6
    Typical Rise Time (ns) 8.9
    Typical Turn-Off Delay Time (ns) 30.3
    Typical Turn-On Delay Time (ns) 4.5
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Maximum Positive Gate Source Voltage (V) 20
    Maximum Continuous Drain Current on PCB @ TC=25°C (A) 1
    Maximum Power Dissipation on PCB @ TC=25°C (W) 0.4
    Maximum Pulsed Drain Current @ TC=25°C (A) 2
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W) 320
    Typical Gate Plateau Voltage (V) 2.9
    Maximum Diode Forward Voltage (V) 1.2
    Original Package SOT-363
    Pin Count 6
    Standard Package Method SOT
    Terminal Form Surface Mount
    Package Height 0.95
    Package Length 2.15
    Package Width 1.3
    PCB changed 6
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Dual
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 2
    Maximum Drain Source Voltage (V) 30
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 2.8
    Operating Junction Temperature (°C) -55 to 150
    Maximum Continuous Drain Current (A) 1
    Maximum Gate Source Leakage Current (nA) 10000
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 190@10V
    Typical Gate Charge @ Vgs (nC) 2@10V
    Typical Gate Charge @ 10V (nC) 2
    Typical Gate to Drain Charge (nC) 0.3
    Typical Gate to Source Charge (nC) 0.3
    Typical Input Capacitance @ Vds (pF) 87@20V
    Typical Reverse Transfer Capacitance @ Vds (pF) 12@20V
    Minimum Gate Threshold Voltage (V) 1.5
    Typical Output Capacitance (pF) 17
    Maximum Power Dissipation (mW) 400
    Typical Fall Time (ns) 15.6
    Typical Rise Time (ns) 8.9
    Typical Turn-Off Delay Time (ns) 30.3
    Typical Turn-On Delay Time (ns) 4.5
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Maximum Positive Gate Source Voltage (V) 20
    Maximum Continuous Drain Current on PCB @ TC=25°C (A) 1
    Maximum Power Dissipation on PCB @ TC=25°C (W) 0.4
    Maximum Pulsed Drain Current @ TC=25°C (A) 2
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W) 320
    Typical Gate Plateau Voltage (V) 2.9
    Maximum Diode Forward Voltage (V) 1.2
    Original Package SOT-363
    Pin Count 6
    Standard Package Method SOT
    Terminal Form Surface Mount
    Package Height 0.95
    Package Length 2.15
    Package Width 1.3
    PCB changed 6