EU RoHS
|
Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
Active |
HTS
|
8541.29.00.95 |
Product Category
|
Power MOSFET |
Configuration
|
Dual Dual Source |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
2 |
Maximum Drain Source Voltage (V)
|
30 |
Maximum Gate Source Voltage (V)
|
±20 |
Maximum Gate Threshold Voltage (V)
|
2.3 |
Maximum Continuous Drain Current (A)
|
14.6 |
Maximum Gate Source Leakage Current (nA)
|
10 |
Typical Gate Charge @ Vgs (nC)
|
31.3@10V |
Typical Gate Charge @ 10V (nC)
|
31.3 |
Typical Input Capacitance @ Vds (pF)
|
1476 |
Maximum Power Dissipation (mW)
|
2700 |
Typical Fall Time (ns)
|
858 |
Typical Rise Time (ns)
|
314 |
Typical Turn-Off Delay Time (ns)
|
928 |
Typical Turn-On Delay Time (ns)
|
186 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Original Package
|
X4-DSN |
Pin Count
|
10 |
Terminal Form
|
Surface Mount |
Package Height
|
0.2 |
Package Length
|
3.37 |
Package Width
|
1.47 |