DMC1028UFDB-7

SKU: 68118

Manufacturer: Diodes Incorporated

Trans MOSFET N/P-CH 12V/20V 6A/3.4A 6-Pin UDFN EP T/R

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Dual
Channel Mode	Enhancement
Channel Type	P
Number of Elements per pcs	2
Maximum Drain Source Voltage (V)	12@N Channel
Maximum Gate Source Voltage (V)	±8
Maximum Gate Threshold Voltage (V)	1
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	3.4@P Channel
Maximum Gate Source Leakage Current (nA)	10000
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	80@4.5V@P Channel
Typical Gate Charge @ Vgs (nC)	11.5@8V@P Channel
Typical Gate to Drain Charge (nC)	2@P Channel
Typical Gate to Source Charge (nC)	1@P Channel
Typical Reverse Recovery Charge (nC)	3.9@P Channel
Typical Input Capacitance @ Vds (pF)	576@10V@P Channel
Typical Reverse Transfer Capacitance @ Vds (pF)	71@10V@P Channel
Minimum Gate Threshold Voltage (V)	0.4
Typical Output Capacitance (pF)	87@P Channel
Maximum Power Dissipation (mW)	1890
Typical Fall Time (ns)	12.7@P Channel
Typical Rise Time (ns)	3.6@P Channel
Typical Turn-Off Delay Time (ns)	20.8@P Channel
Typical Turn-On Delay Time (ns)	3.5@P Channel
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Maximum Power Dissipation on PCB @ TC=25°C (W)	1.89
Maximum Pulsed Drain Current @ TC=25°C (A)	20@P Channel
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	92
Typical Diode Forward Voltage (V)	0.7
Typical Gate Plateau Voltage (V)	1.7
Typical Reverse Recovery Time (ns)	13.1@P Channel
Maximum Diode Forward Voltage (V)	1.2
Maximum Positive Gate Source Voltage (V)	8
Maximum Continuous Drain Current on PCB @ TC=25°C (A)	3.4@P Channel
Original Package	UDFN EP
Pin Count	6
Standard Package Method	DFN
Terminal Form	Surface Mount
Package Height	0.56
Package Length	2
Package Width	2
PCB changed	6

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Dual
Channel Mode	Enhancement
Channel Type	P
Number of Elements per pcs	2
Maximum Drain Source Voltage (V)	12@N Channel
Maximum Gate Source Voltage (V)	±8
Maximum Gate Threshold Voltage (V)	1
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	3.4@P Channel
Maximum Gate Source Leakage Current (nA)	10000
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	80@4.5V@P Channel
Typical Gate Charge @ Vgs (nC)	11.5@8V@P Channel
Typical Gate to Drain Charge (nC)	2@P Channel
Typical Gate to Source Charge (nC)	1@P Channel
Typical Reverse Recovery Charge (nC)	3.9@P Channel
Typical Input Capacitance @ Vds (pF)	576@10V@P Channel
Typical Reverse Transfer Capacitance @ Vds (pF)	71@10V@P Channel
Minimum Gate Threshold Voltage (V)	0.4
Typical Output Capacitance (pF)	87@P Channel
Maximum Power Dissipation (mW)	1890
Typical Fall Time (ns)	12.7@P Channel
Typical Rise Time (ns)	3.6@P Channel
Typical Turn-Off Delay Time (ns)	20.8@P Channel
Typical Turn-On Delay Time (ns)	3.5@P Channel
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Maximum Power Dissipation on PCB @ TC=25°C (W)	1.89
Maximum Pulsed Drain Current @ TC=25°C (A)	20@P Channel
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	92
Typical Diode Forward Voltage (V)	0.7
Typical Gate Plateau Voltage (V)	1.7
Typical Reverse Recovery Time (ns)	13.1@P Channel
Maximum Diode Forward Voltage (V)	1.2
Maximum Positive Gate Source Voltage (V)	8
Maximum Continuous Drain Current on PCB @ TC=25°C (A)	3.4@P Channel
Original Package	UDFN EP
Pin Count	6
Standard Package Method	DFN
Terminal Form	Surface Mount
Package Height	0.56
Package Length	2
Package Width	2
PCB changed	6