EU RoHS
|
Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
Active |
HTS
|
8541.29.00.95 |
Automotive
|
Unknown |
PPAP
|
Unknown |
Product Category
|
Power MOSFET |
Configuration
|
Dual Common Drain |
Process Technology
|
TMOS |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
2 |
Maximum Drain Source Voltage (V)
|
40 |
Maximum Gate Source Voltage (V)
|
±20 |
Maximum Gate Threshold Voltage (V)
|
3 |
Maximum Continuous Drain Current (A)
|
12 |
Maximum Gate Source Leakage Current (nA)
|
100 |
Maximum IDSS (uA)
|
1 |
Maximum Drain Source Resistance (mOhm)
|
45@10V@P Channel |
Typical Gate Charge @ Vgs (nC)
|
7.2@4.5V@P Channel |
Typical Gate Charge @ 10V (nC)
|
16.2@P Channel |
Typical Input Capacitance @ Vds (pF)
|
900@20V@P Channel |
Maximum Power Dissipation (mW)
|
30000@P Channel |
Typical Fall Time (ns)
|
41.2@P Channel |
Typical Rise Time (ns)
|
8.4@P Channel |
Typical Turn-Off Delay Time (ns)
|
44.8@P Channel |
Typical Turn-On Delay Time (ns)
|
6.2@P Channel |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
175 |
Packing Method
|
Tape and Reel |
Original Package
|
DPAK |
Pin Count
|
5 |
Standard Package Method
|
TO-252 |
Terminal Form
|
Surface Mount |
Package Height
|
2.29 |
Package Length
|
6.6 |
Package Width
|
6.1 |
PCB changed
|
4 |