|
EU RoHS
|
Compliant |
|
ECCN (US)
|
EAR99 |
|
Part Status
|
Active |
|
HTS
|
8541.29.00.95 |
|
Automotive
|
Unknown |
|
PPAP
|
Unknown |
|
Product Category
|
Power MOSFET |
|
Configuration
|
Single Quad Drain Triple Source |
|
Channel Mode
|
Enhancement |
|
Channel Type
|
P |
|
Number of Elements per pcs
|
1 |
|
Maximum Drain Source Voltage (V)
|
40 |
|
Maximum Gate Source Voltage (V)
|
±20 |
|
Maximum Gate Threshold Voltage (V)
|
2.5 |
|
Operating Junction Temperature (°C)
|
-55 to 150 |
|
Maximum Continuous Drain Current (A)
|
10 |
|
Maximum Drain Source Resistance (mOhm)
|
15@10V |
|
Typical Gate Charge @ Vgs (nC)
|
42@10V |
|
Typical Gate Charge @ 10V (nC)
|
42 |
|
Typical Input Capacitance @ Vds (pF)
|
2500@20V |
|
Maximum Power Dissipation (mW)
|
1700 |
|
Typical Fall Time (ns)
|
30 |
|
Typical Rise Time (ns)
|
20 |
|
Typical Turn-Off Delay Time (ns)
|
55 |
|
Typical Turn-On Delay Time (ns)
|
9.4 |
|
Operating Temperature-Min
|
-55 |
|
Operating Temperature-Max
|
150 |
|
Packing Method
|
Tape and Reel |
|
Maximum Positive Gate Source Voltage (V)
|
20 |
|
Maximum Diode Forward Voltage (V)
|
1 |
|
Original Package
|
SOIC |
|
Pin Count
|
8 |
|
Standard Package Method
|
SOP |
|
Terminal Form
|
Surface Mount |
|
Package Height
|
1.5 |
|
Package Length
|
4.9 |
|
Package Width
|
3.9 |
|
PCB changed
|
8 |