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    AO4264

    SKU: 95501
    Trans MOSFET N-CH 60V 12A 8-Pin SOIC T/R
    3390 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Obsolete
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single Quad Drain Triple Source
    Process Technology AlphaMOS
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 60
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 2.5
    Maximum Continuous Drain Current (A) 12
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 11@10V
    Typical Gate Charge @ Vgs (nC) 11@4.5V
    Typical Gate Charge @ 10V (nC) 25.5
    Typical Input Capacitance @ Vds (pF) 2007@30V
    Maximum Power Dissipation (mW) 3100
    Typical Fall Time (ns) 3
    Typical Rise Time (ns) 3.5
    Typical Turn-Off Delay Time (ns) 27
    Typical Turn-On Delay Time (ns) 8.5
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Original Package SOIC
    Pin Count 8
    Standard Package Method SOP
    Terminal Form Surface Mount
    Package Height 1.5
    Package Length 4.9
    Package Width 3.9
    PCB changed 8
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Obsolete
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single Quad Drain Triple Source
    Process Technology AlphaMOS
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 60
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 2.5
    Maximum Continuous Drain Current (A) 12
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 11@10V
    Typical Gate Charge @ Vgs (nC) 11@4.5V
    Typical Gate Charge @ 10V (nC) 25.5
    Typical Input Capacitance @ Vds (pF) 2007@30V
    Maximum Power Dissipation (mW) 3100
    Typical Fall Time (ns) 3
    Typical Rise Time (ns) 3.5
    Typical Turn-Off Delay Time (ns) 27
    Typical Turn-On Delay Time (ns) 8.5
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Original Package SOIC
    Pin Count 8
    Standard Package Method SOP
    Terminal Form Surface Mount
    Package Height 1.5
    Package Length 4.9
    Package Width 3.9
    PCB changed 8