SUM90P10-19L-E3

SKU: 113866

Manufacturer: Vishay

Trans MOSFET P-CH 100V 17.2A 3-Pin(2+Tab) D2PAK

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Netherlands

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Process Technology	TrenchFET
Channel Mode	Enhancement
Channel Type	P
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	3
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	17.2
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	19@10V
Typical Gate Charge @ Vgs (nC)	97@4.5V
Typical Gate Charge @ 10V (nC)	217
Typical Gate to Drain Charge (nC)	51
Typical Gate to Source Charge (nC)	42
Typical Reverse Recovery Charge (nC)	220
Typical Input Capacitance @ Vds (pF)	11100@50V
Typical Reverse Transfer Capacitance @ Vds (pF)	1690@50V
Minimum Gate Threshold Voltage (V)	1
Typical Output Capacitance (pF)	700
Maximum Power Dissipation (mW)	13600
Typical Fall Time (ns)	870
Typical Rise Time (ns)	510
Typical Turn-Off Delay Time (ns)	145
Typical Turn-On Delay Time (ns)	20
Operating Temperature-Min	-55
Operating Temperature-Max	175
Maximum Power Dissipation on PCB @ TC=25°C (W)	13.6
Maximum Pulsed Drain Current @ TC=25°C (A)	90
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	40
Typical Diode Forward Voltage (V)	0.8
Typical Gate Plateau Voltage (V)	4.2
Typical Reverse Recovery Time (ns)	80
Maximum Diode Forward Voltage (V)	1.5
Maximum Positive Gate Source Voltage (V)	20
Maximum Continuous Drain Current on PCB @ TC=25°C (A)	17.2
Original Package	D2PAK
Pin Count	3
Standard Package Method	TO-263
Terminal Form	Surface Mount
Package Height	4.83(Max)
Package Length	10.41(Max)
Package Width	9.65(Max)
PCB changed	2
Tab	Tab

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Process Technology	TrenchFET
Channel Mode	Enhancement
Channel Type	P
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	3
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	17.2
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	19@10V
Typical Gate Charge @ Vgs (nC)	97@4.5V
Typical Gate Charge @ 10V (nC)	217
Typical Gate to Drain Charge (nC)	51
Typical Gate to Source Charge (nC)	42
Typical Reverse Recovery Charge (nC)	220
Typical Input Capacitance @ Vds (pF)	11100@50V
Typical Reverse Transfer Capacitance @ Vds (pF)	1690@50V
Minimum Gate Threshold Voltage (V)	1
Typical Output Capacitance (pF)	700
Maximum Power Dissipation (mW)	13600
Typical Fall Time (ns)	870
Typical Rise Time (ns)	510
Typical Turn-Off Delay Time (ns)	145
Typical Turn-On Delay Time (ns)	20
Operating Temperature-Min	-55
Operating Temperature-Max	175
Maximum Power Dissipation on PCB @ TC=25°C (W)	13.6
Maximum Pulsed Drain Current @ TC=25°C (A)	90
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	40
Typical Diode Forward Voltage (V)	0.8
Typical Gate Plateau Voltage (V)	4.2
Typical Reverse Recovery Time (ns)	80
Maximum Diode Forward Voltage (V)	1.5
Maximum Positive Gate Source Voltage (V)	20
Maximum Continuous Drain Current on PCB @ TC=25°C (A)	17.2
Original Package	D2PAK
Pin Count	3
Standard Package Method	TO-263
Terminal Form	Surface Mount
Package Height	4.83(Max)
Package Length	10.41(Max)
Package Width	9.65(Max)
PCB changed	2
Tab	Tab