SUM110P04-05-E3

SKU: 113863

Manufacturer: Vishay

Trans MOSFET P-CH 40V 110A 3-Pin(2+Tab) D2PAK

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360 parts IN STOCK

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Netherlands

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Rohs State : Need to verify

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Process Technology	TrenchFET
Channel Mode	Enhancement
Channel Type	P
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	40
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	110
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	5@10V
Typical Gate Charge @ Vgs (nC)	185@10V
Typical Gate Charge @ 10V (nC)	185
Typical Gate to Drain Charge (nC)	42
Typical Gate to Source Charge (nC)	48
Typical Reverse Recovery Charge (nC)	130
Typical Input Capacitance @ Vds (pF)	11300@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	1000@25V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	1510
Maximum Power Dissipation (mW)	15000
Typical Fall Time (ns)	35
Typical Rise Time (ns)	290
Typical Turn-Off Delay Time (ns)	110
Typical Turn-On Delay Time (ns)	25
Operating Temperature-Min	-55
Operating Temperature-Max	175
Maximum Power Dissipation on PCB @ TC=25°C (W)	15
Maximum Pulsed Drain Current @ TC=25°C (A)	240
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	40
Typical Diode Forward Voltage (V)	0.8
Typical Gate Plateau Voltage (V)	4.9
Typical Reverse Recovery Time (ns)	70
Maximum Diode Forward Voltage (V)	1.5
Typical Gate Threshold Voltage (V)	3
Maximum Positive Gate Source Voltage (V)	20
Maximum Continuous Drain Current on PCB @ TC=25°C (A)	39
Pin Count	3
Standard Package Method	TO-263
Original Package	D2PAK
Terminal Form	Surface Mount
Package Height	4.83(Max)
Package Length	10.41(Max)
Package Width	9.65(Max)
PCB changed	2
Tab	Tab

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Process Technology	TrenchFET
Channel Mode	Enhancement
Channel Type	P
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	40
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	110
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	5@10V
Typical Gate Charge @ Vgs (nC)	185@10V
Typical Gate Charge @ 10V (nC)	185
Typical Gate to Drain Charge (nC)	42
Typical Gate to Source Charge (nC)	48
Typical Reverse Recovery Charge (nC)	130
Typical Input Capacitance @ Vds (pF)	11300@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	1000@25V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	1510
Maximum Power Dissipation (mW)	15000
Typical Fall Time (ns)	35
Typical Rise Time (ns)	290
Typical Turn-Off Delay Time (ns)	110
Typical Turn-On Delay Time (ns)	25
Operating Temperature-Min	-55
Operating Temperature-Max	175
Maximum Power Dissipation on PCB @ TC=25°C (W)	15
Maximum Pulsed Drain Current @ TC=25°C (A)	240
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	40
Typical Diode Forward Voltage (V)	0.8
Typical Gate Plateau Voltage (V)	4.9
Typical Reverse Recovery Time (ns)	70
Maximum Diode Forward Voltage (V)	1.5
Typical Gate Threshold Voltage (V)	3
Maximum Positive Gate Source Voltage (V)	20
Maximum Continuous Drain Current on PCB @ TC=25°C (A)	39
Pin Count	3
Standard Package Method	TO-263
Original Package	D2PAK
Terminal Form	Surface Mount
Package Height	4.83(Max)
Package Length	10.41(Max)
Package Width	9.65(Max)
PCB changed	2
Tab	Tab