EU RoHS
|
Compliant with Exemption |
ECCN (US)
|
EAR99 |
Part Status
|
Obsolete |
HTS
|
8541.29.00.95 |
Automotive
|
Yes |
PPAP
|
Unknown |
Product Category
|
Power MOSFET |
Configuration
|
Single |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
60 |
Maximum Gate Source Voltage (V)
|
±20 |
Maximum Gate Threshold Voltage (V)
|
2.5 |
Operating Junction Temperature (°C)
|
-55 to 175 |
Maximum Continuous Drain Current (A)
|
120 |
Maximum Drain Source Resistance (mOhm)
|
3.5@10V |
Typical Gate Charge @ Vgs (nC)
|
220@10V |
Typical Gate Charge @ 10V (nC)
|
220 |
Typical Input Capacitance @ Vds (pF)
|
11755@25V |
Maximum Power Dissipation (mW)
|
375000 |
Typical Fall Time (ns)
|
35 |
Typical Rise Time (ns)
|
23 |
Typical Turn-Off Delay Time (ns)
|
83 |
Typical Turn-On Delay Time (ns)
|
19 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
175 |
Supplier Temperature Grade
|
Automotive |
Maximum Positive Gate Source Voltage (V)
|
20 |
Typical Diode Forward Voltage (V)
|
0.8 |
Maximum Diode Forward Voltage (V)
|
1.5 |
Original Package
|
D2PAK |
Pin Count
|
3 |
Terminal Form
|
Surface Mount |
Package Height
|
4.83(Max) |
Package Length
|
10.41(Max) |
Package Width
|
9.65(Max) |
PCB changed
|
2 |
Tab
|
Tab |