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    SQ9407EY-T1-GE3

    SKU: 101684
    Manufacturer: Vishay
    Trans MOSFET P-CH 60V 4.6A Automotive 8-Pin SOIC N T/R
    940 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive Yes
    PPAP Unknown
    Product Category Power MOSFET
    Configuration Single Quad Drain Triple Source
    Process Technology TrenchFET
    Channel Mode Enhancement
    Channel Type P
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 60
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 2.5
    Maximum Continuous Drain Current (A) 4.6
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 85@10V
    Typical Gate Charge @ Vgs (nC) 26.5@10V
    Typical Gate Charge @ 10V (nC) 26.5
    Typical Input Capacitance @ Vds (pF) 912@30V
    Maximum Power Dissipation (mW) 3750
    Typical Fall Time (ns) 8
    Typical Rise Time (ns) 13
    Typical Turn-Off Delay Time (ns) 36
    Typical Turn-On Delay Time (ns) 11
    Operating Temperature-Min -55
    Operating Temperature-Max 175
    Supplier Temperature Grade Automotive
    Original Package SOIC N
    Pin Count 8
    Standard Package Method SOIC
    Terminal Form Surface Mount
    Package Height 1.55(Max)
    Package Length 5(Max)
    Package Width 4(Max)
    PCB changed 8
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive Yes
    PPAP Unknown
    Product Category Power MOSFET
    Configuration Single Quad Drain Triple Source
    Process Technology TrenchFET
    Channel Mode Enhancement
    Channel Type P
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 60
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 2.5
    Maximum Continuous Drain Current (A) 4.6
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 85@10V
    Typical Gate Charge @ Vgs (nC) 26.5@10V
    Typical Gate Charge @ 10V (nC) 26.5
    Typical Input Capacitance @ Vds (pF) 912@30V
    Maximum Power Dissipation (mW) 3750
    Typical Fall Time (ns) 8
    Typical Rise Time (ns) 13
    Typical Turn-Off Delay Time (ns) 36
    Typical Turn-On Delay Time (ns) 11
    Operating Temperature-Min -55
    Operating Temperature-Max 175
    Supplier Temperature Grade Automotive
    Original Package SOIC N
    Pin Count 8
    Standard Package Method SOIC
    Terminal Form Surface Mount
    Package Height 1.55(Max)
    Package Length 5(Max)
    Package Width 4(Max)
    PCB changed 8