EU RoHS
|
Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
NRND |
HTS
|
8541.29.00.95 |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Configuration
|
Single Quad Drain Triple Source |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
30 |
Maximum Gate Source Voltage (V)
|
±20 |
Maximum Gate Threshold Voltage (V)
|
2.2 |
Maximum Continuous Drain Current (A)
|
20 |
Maximum Drain Source Resistance (mOhm)
|
9.5@10V |
Typical Gate Charge @ Vgs (nC)
|
18@10V |
Typical Gate Charge @ 10V (nC)
|
18 |
Typical Gate to Drain Charge (nC)
|
2.3 |
Typical Gate to Source Charge (nC)
|
2.4 |
Typical Reverse Recovery Charge (nC)
|
5 |
Typical Input Capacitance @ Vds (pF)
|
985@15V |
Typical Output Capacitance (pF)
|
205 |
Maximum Power Dissipation (mW)
|
3900 |
Typical Fall Time (ns)
|
9 |
Typical Rise Time (ns)
|
12 |
Typical Turn-Off Delay Time (ns)
|
19 |
Typical Turn-On Delay Time (ns)
|
14 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Packing Method
|
Tape and Reel |
Maximum Positive Gate Source Voltage (V)
|
20 |
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
|
15 |
Maximum Power Dissipation on PCB @ TC=25°C (W)
|
3.9 |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
|
70 |
Typical Diode Forward Voltage (V)
|
0.76 |
Typical Gate Plateau Voltage (V)
|
2.7 |
Typical Reverse Recovery Time (ns)
|
14 |
Maximum Diode Forward Voltage (V)
|
1.1 |
Minimum Gate Resistance (Ohm)
|
0.3 |
Maximum Gate Resistance (Ohm)
|
2.6 |
Original Package
|
PowerPAK SO EP |
Pin Count
|
8 |
Terminal Form
|
Surface Mount |
Package Height
|
1.07(Max) |
Package Length
|
4.9 |
Package Width
|
5.89 |
PCB changed
|
8 |