0 items
You have no items in your shopping cart.
All Categories
    Close
    Filters
    Preferences
    Search

    SIHP21N60EF-GE3

    SKU: 35583
    Manufacturer: Vishay
    Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220AB
    4030 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 600
    Maximum Gate Source Voltage (V) ±30
    Maximum Gate Threshold Voltage (V) 4
    Maximum Continuous Drain Current (A) 21
    Maximum Gate Source Leakage Current (nA) 1000
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 176@10V
    Typical Gate Charge @ Vgs (nC) 56@10V
    Typical Gate Charge @ 10V (nC) 56
    Typical Input Capacitance @ Vds (pF) 2030@100V
    Maximum Power Dissipation (mW) 227000
    Typical Fall Time (ns) 27
    Typical Rise Time (ns) 31
    Typical Turn-Off Delay Time (ns) 59
    Typical Turn-On Delay Time (ns) 21
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Original Package TO-220AB
    Pin Count 3
    Standard Package Method TO-220
    Terminal Form Through Hole
    Package Height 9.01(Max)
    Package Length 10.51(Max)
    Package Width 4.65(Max)
    PCB changed 3
    Tab Tab
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 600
    Maximum Gate Source Voltage (V) ±30
    Maximum Gate Threshold Voltage (V) 4
    Maximum Continuous Drain Current (A) 21
    Maximum Gate Source Leakage Current (nA) 1000
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 176@10V
    Typical Gate Charge @ Vgs (nC) 56@10V
    Typical Gate Charge @ 10V (nC) 56
    Typical Input Capacitance @ Vds (pF) 2030@100V
    Maximum Power Dissipation (mW) 227000
    Typical Fall Time (ns) 27
    Typical Rise Time (ns) 31
    Typical Turn-Off Delay Time (ns) 59
    Typical Turn-On Delay Time (ns) 21
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Original Package TO-220AB
    Pin Count 3
    Standard Package Method TO-220
    Terminal Form Through Hole
    Package Height 9.01(Max)
    Package Length 10.51(Max)
    Package Width 4.65(Max)
    PCB changed 3
    Tab Tab