SIHFL014TR-GE3

SKU: 148827

Manufacturer: Vishay

Trans MOSFET N-CH 60V 2.7A 4-Pin(3+Tab) SOT-223 T/R

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Netherlands

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single Dual Drain
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	2.7
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	25
Maximum Drain Source Resistance (mOhm)	200@10V
Typical Gate Charge @ Vgs (nC)	11(Max)@10V
Typical Gate Charge @ 10V (nC)	11(Max)
Typical Gate to Drain Charge (nC)	5.8(Max)
Typical Gate to Source Charge (nC)	3.1(Max)
Typical Reverse Recovery Charge (nC)	200
Typical Input Capacitance @ Vds (pF)	300@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	29@25V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	160
Maximum Power Dissipation (mW)	2000
Typical Fall Time (ns)	19
Typical Rise Time (ns)	50
Typical Turn-Off Delay Time (ns)	13
Typical Turn-On Delay Time (ns)	10
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Maximum Positive Gate Source Voltage (V)	20
Maximum Power Dissipation on PCB @ TC=25°C (W)	2
Maximum Pulsed Drain Current @ TC=25°C (A)	22
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	60
Typical Gate Plateau Voltage (V)	7.2
Typical Reverse Recovery Time (ns)	70
Maximum Diode Forward Voltage (V)	1.6
Original Package	SOT-223
Pin Count	4
Standard Package Method	SOT
Terminal Form	Surface Mount
Package Height	1.8(Max) - 0.06
Package Length	6.7(Max)
Package Width	3.7(Max)
PCB changed	3
Tab	Tab

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single Dual Drain
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	2.7
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	25
Maximum Drain Source Resistance (mOhm)	200@10V
Typical Gate Charge @ Vgs (nC)	11(Max)@10V
Typical Gate Charge @ 10V (nC)	11(Max)
Typical Gate to Drain Charge (nC)	5.8(Max)
Typical Gate to Source Charge (nC)	3.1(Max)
Typical Reverse Recovery Charge (nC)	200
Typical Input Capacitance @ Vds (pF)	300@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	29@25V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	160
Maximum Power Dissipation (mW)	2000
Typical Fall Time (ns)	19
Typical Rise Time (ns)	50
Typical Turn-Off Delay Time (ns)	13
Typical Turn-On Delay Time (ns)	10
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Maximum Positive Gate Source Voltage (V)	20
Maximum Power Dissipation on PCB @ TC=25°C (W)	2
Maximum Pulsed Drain Current @ TC=25°C (A)	22
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	60
Typical Gate Plateau Voltage (V)	7.2
Typical Reverse Recovery Time (ns)	70
Maximum Diode Forward Voltage (V)	1.6
Original Package	SOT-223
Pin Count	4
Standard Package Method	SOT
Terminal Form	Surface Mount
Package Height	1.8(Max) - 0.06
Package Length	6.7(Max)
Package Width	3.7(Max)
PCB changed	3
Tab	Tab