EU RoHS
|
Compliant with Exemption |
ECCN (US)
|
EAR99 |
Part Status
|
Active |
HTS
|
8541.29.00.95 |
SVHC
|
Yes |
SVHC Exceeds Threshold
|
Yes |
Product Category
|
Power MOSFET |
Configuration
|
Dual Dual Drain |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
2 |
Maximum Drain Source Voltage (V)
|
12 |
Maximum Gate Source Voltage (V)
|
±12 |
Operating Junction Temperature (°C)
|
-55 to 150 |
Maximum Continuous Drain Current (A)
|
24.8 |
Maximum Drain Source Resistance (mOhm)
|
3.4@4.5V |
Typical Gate Charge @ Vgs (nC)
|
80@10V |
Typical Gate Charge @ 10V (nC)
|
80 |
Typical Input Capacitance @ Vds (pF)
|
5000@6V |
Maximum Power Dissipation (mW)
|
3500 |
Typical Fall Time (ns)
|
25 |
Typical Rise Time (ns)
|
15 |
Typical Turn-Off Delay Time (ns)
|
90 |
Typical Turn-On Delay Time (ns)
|
30 |
Operating Temperature-Min
|
-55 |