EU RoHS
|
Compliant with Exemption |
ECCN (US)
|
EAR99 |
Part Status
|
NRND |
HTS
|
8541.10.00.80 |
SVHC
|
Yes |
SVHC Exceeds Threshold
|
Yes |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Configuration
|
Single Quad Drain Triple Source |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
20 |
Maximum Gate Source Voltage (V)
|
±16 |
Maximum Gate Threshold Voltage (V)
|
2 |
Operating Junction Temperature (°C)
|
-55 to 150 |
Maximum Continuous Drain Current (A)
|
14 |
Maximum Drain Source Resistance (mOhm)
|
4.9@10V |
Typical Gate Charge @ Vgs (nC)
|
20@4.5V |
Typical Gate to Drain Charge (nC)
|
4.9 |
Typical Gate to Source Charge (nC)
|
6.3 |
Typical Reverse Recovery Charge (nC)
|
20 |
Typical Output Capacitance (pF)
|
410 |
Maximum Power Dissipation (mW)
|
3800 |
Typical Fall Time (ns)
|
10 |
Typical Rise Time (ns)
|
10 |
Typical Turn-Off Delay Time (ns)
|
60 |
Typical Turn-On Delay Time (ns)
|
10 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Packing Method
|
Tape and Reel |
Maximum Positive Gate Source Voltage (V)
|
16 |
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
|
14 |
Maximum Power Dissipation on PCB @ TC=25°C (W)
|
1.5 |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
|
81 |
Typical Diode Forward Voltage (V)
|
0.75 |
Typical Gate Plateau Voltage (V)
|
2.5 |
Typical Reverse Recovery Time (ns)
|
30 |
Maximum Diode Forward Voltage (V)
|
1.2 |
Minimum Gate Resistance (Ohm)
|
0.7 |
Maximum Gate Resistance (Ohm)
|
2.1 |
Original Package
|
PowerPAK 1212 |
Pin Count
|
8 |
Standard Package Method
|
PowerPAK 1212 |
Terminal Form
|
Surface Mount |
Package Height
|
1.07(Max) |
Package Length
|
3.05 |
Package Width
|
3.05 |
PCB changed
|
8 |