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    SI6423DQ-T1-GE3

    SKU: 94521
    Manufacturer: Vishay
    Trans MOSFET P-CH 12V 8.2A 8-Pin TSSOP T/R
    820 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single Triple Drain Quad Source
    Process Technology TrenchFET
    Channel Mode Enhancement
    Channel Type P
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 12
    Maximum Gate Source Voltage (V) ±8
    Maximum Gate Threshold Voltage (V) 0.8
    Operating Junction Temperature (°C) -55 to 150
    Maximum Continuous Drain Current (A) 8.2
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 8.5@4.5V
    Typical Gate Charge @ Vgs (nC) 74@5V
    Typical Gate to Drain Charge (nC) 19
    Typical Gate to Source Charge (nC) 9
    Minimum Gate Threshold Voltage (V) 0.4
    Typical Output Capacitance (pF) 1599
    Maximum Power Dissipation (mW) 1500
    Typical Fall Time (ns) 200
    Typical Rise Time (ns) 75
    Typical Turn-Off Delay Time (ns) 270
    Typical Turn-On Delay Time (ns) 50
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Maximum Power Dissipation on PCB @ TC=25°C (W) 1.5
    Maximum Pulsed Drain Current @ TC=25°C (A) 30
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W) 120
    Typical Diode Forward Voltage (V) 0.58
    Typical Gate Plateau Voltage (V) 1.6
    Typical Reverse Recovery Time (ns) 160
    Maximum Diode Forward Voltage (V) 1.1
    Maximum Positive Gate Source Voltage (V) 8
    Maximum Continuous Drain Current on PCB @ TC=25°C (A) 9.5
    Original Package TSSOP
    Pin Count 8
    Standard Package Method SOP
    Terminal Form Surface Mount
    Package Height 1
    Package Length 3
    Package Width 4.4
    PCB changed 8
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single Triple Drain Quad Source
    Process Technology TrenchFET
    Channel Mode Enhancement
    Channel Type P
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 12
    Maximum Gate Source Voltage (V) ±8
    Maximum Gate Threshold Voltage (V) 0.8
    Operating Junction Temperature (°C) -55 to 150
    Maximum Continuous Drain Current (A) 8.2
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 8.5@4.5V
    Typical Gate Charge @ Vgs (nC) 74@5V
    Typical Gate to Drain Charge (nC) 19
    Typical Gate to Source Charge (nC) 9
    Minimum Gate Threshold Voltage (V) 0.4
    Typical Output Capacitance (pF) 1599
    Maximum Power Dissipation (mW) 1500
    Typical Fall Time (ns) 200
    Typical Rise Time (ns) 75
    Typical Turn-Off Delay Time (ns) 270
    Typical Turn-On Delay Time (ns) 50
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Maximum Power Dissipation on PCB @ TC=25°C (W) 1.5
    Maximum Pulsed Drain Current @ TC=25°C (A) 30
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W) 120
    Typical Diode Forward Voltage (V) 0.58
    Typical Gate Plateau Voltage (V) 1.6
    Typical Reverse Recovery Time (ns) 160
    Maximum Diode Forward Voltage (V) 1.1
    Maximum Positive Gate Source Voltage (V) 8
    Maximum Continuous Drain Current on PCB @ TC=25°C (A) 9.5
    Original Package TSSOP
    Pin Count 8
    Standard Package Method SOP
    Terminal Form Surface Mount
    Package Height 1
    Package Length 3
    Package Width 4.4
    PCB changed 8