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    SI4908DY-T1-E3

    SKU: 63910
    Manufacturer: Vishay
    Trans MOSFET N-CH 40V 5A 8-Pin SOIC N T/R
    430 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Obsolete
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Dual Dual Drain
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 2
    Maximum Drain Source Voltage (V) 40
    Maximum Gate Source Voltage (V) ±16
    Maximum Gate Threshold Voltage (V) 2.2
    Maximum Continuous Drain Current (A) 5
    Maximum Drain Source Resistance (mOhm) 60@10V
    Typical Gate Charge @ Vgs (nC) 8@10V
    Typical Gate Charge @ 10V (nC) 8
    Typical Gate to Drain Charge (nC) 1.4
    Typical Gate to Source Charge (nC) 1.1
    Typical Reverse Recovery Charge (nC) 26
    Typical Input Capacitance @ Vds (pF) 355@20V
    Typical Output Capacitance (pF) 50
    Maximum Power Dissipation (mW) 1850
    Typical Fall Time (ns) 27
    Typical Rise Time (ns) 20
    Typical Turn-Off Delay Time (ns) 23
    Typical Turn-On Delay Time (ns) 8
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Original Package SOIC N
    Pin Count 8
    Standard Package Method SOP
    Terminal Form Surface Mount
    Package Height 1.5(Max)
    Package Length 5(Max)
    Package Width 4(Max)
    PCB changed 8
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Obsolete
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Dual Dual Drain
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 2
    Maximum Drain Source Voltage (V) 40
    Maximum Gate Source Voltage (V) ±16
    Maximum Gate Threshold Voltage (V) 2.2
    Maximum Continuous Drain Current (A) 5
    Maximum Drain Source Resistance (mOhm) 60@10V
    Typical Gate Charge @ Vgs (nC) 8@10V
    Typical Gate Charge @ 10V (nC) 8
    Typical Gate to Drain Charge (nC) 1.4
    Typical Gate to Source Charge (nC) 1.1
    Typical Reverse Recovery Charge (nC) 26
    Typical Input Capacitance @ Vds (pF) 355@20V
    Typical Output Capacitance (pF) 50
    Maximum Power Dissipation (mW) 1850
    Typical Fall Time (ns) 27
    Typical Rise Time (ns) 20
    Typical Turn-Off Delay Time (ns) 23
    Typical Turn-On Delay Time (ns) 8
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Original Package SOIC N
    Pin Count 8
    Standard Package Method SOP
    Terminal Form Surface Mount
    Package Height 1.5(Max)
    Package Length 5(Max)
    Package Width 4(Max)
    PCB changed 8