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    SI4904DY-T1-GE3

    SKU: 63908
    Manufacturer: Vishay
    Trans MOSFET N-CH 40V 8A 8-Pin SOIC N T/R
    29900 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Dual Dual Drain
    Process Technology TrenchFET
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 2
    Maximum Drain Source Voltage (V) 40
    Maximum Gate Source Voltage (V) ±16
    Maximum Gate Threshold Voltage (V) 2
    Maximum Continuous Drain Current (A) 8
    Maximum Drain Source Resistance (mOhm) 16@10V
    Typical Gate Charge @ Vgs (nC) 56@10V
    Typical Gate Charge @ 10V (nC) 56
    Typical Gate to Drain Charge (nC) 9.7
    Typical Gate to Source Charge (nC) 5.5
    Typical Reverse Recovery Charge (nC) 62
    Typical Input Capacitance @ Vds (pF) 2390@20V
    Typical Output Capacitance (pF) 270
    Maximum Power Dissipation (mW) 2000
    Typical Fall Time (ns) 10
    Typical Rise Time (ns) 20
    Typical Turn-Off Delay Time (ns) 56
    Typical Turn-On Delay Time (ns) 15
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Original Package SOIC N
    Pin Count 8
    Standard Package Method SOP
    Terminal Form Surface Mount
    Package Height 1.55(Max)
    Package Length 5(Max)
    Package Width 4(Max)
    PCB changed 8
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Dual Dual Drain
    Process Technology TrenchFET
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 2
    Maximum Drain Source Voltage (V) 40
    Maximum Gate Source Voltage (V) ±16
    Maximum Gate Threshold Voltage (V) 2
    Maximum Continuous Drain Current (A) 8
    Maximum Drain Source Resistance (mOhm) 16@10V
    Typical Gate Charge @ Vgs (nC) 56@10V
    Typical Gate Charge @ 10V (nC) 56
    Typical Gate to Drain Charge (nC) 9.7
    Typical Gate to Source Charge (nC) 5.5
    Typical Reverse Recovery Charge (nC) 62
    Typical Input Capacitance @ Vds (pF) 2390@20V
    Typical Output Capacitance (pF) 270
    Maximum Power Dissipation (mW) 2000
    Typical Fall Time (ns) 10
    Typical Rise Time (ns) 20
    Typical Turn-Off Delay Time (ns) 56
    Typical Turn-On Delay Time (ns) 15
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Original Package SOIC N
    Pin Count 8
    Standard Package Method SOP
    Terminal Form Surface Mount
    Package Height 1.55(Max)
    Package Length 5(Max)
    Package Width 4(Max)
    PCB changed 8