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    SI4621DY-T1-E3

    SKU: 42662
    Manufacturer: Vishay
    Trans MOSFET P-CH 20V 5A 8-Pin SOIC N T/R
    10560 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Obsolete
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single Dual Drain
    Channel Mode Enhancement
    Channel Type P
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 20
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 3
    Maximum Continuous Drain Current (A) 5
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 54@10V
    Typical Gate Charge @ Vgs (nC) 4.5@4.5V
    Typical Gate Charge @ 10V (nC) 8.7
    Typical Gate to Drain Charge (nC) 1.8
    Typical Gate to Source Charge (nC) 1.7
    Typical Reverse Recovery Charge (nC) 10
    Typical Input Capacitance @ Vds (pF) 450@10V
    Typical Output Capacitance (pF) 160
    Maximum Power Dissipation (mW) 2000
    Typical Fall Time (ns) 15
    Typical Rise Time (ns) 60
    Typical Turn-Off Delay Time (ns) 22
    Typical Turn-On Delay Time (ns) 15
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Original Package SOIC N
    Pin Count 8
    Standard Package Method SOP
    Terminal Form Surface Mount
    Package Height 1.55(Max)
    Package Length 5(Max)
    Package Width 4(Max)
    PCB changed 8
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Obsolete
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single Dual Drain
    Channel Mode Enhancement
    Channel Type P
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 20
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 3
    Maximum Continuous Drain Current (A) 5
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 54@10V
    Typical Gate Charge @ Vgs (nC) 4.5@4.5V
    Typical Gate Charge @ 10V (nC) 8.7
    Typical Gate to Drain Charge (nC) 1.8
    Typical Gate to Source Charge (nC) 1.7
    Typical Reverse Recovery Charge (nC) 10
    Typical Input Capacitance @ Vds (pF) 450@10V
    Typical Output Capacitance (pF) 160
    Maximum Power Dissipation (mW) 2000
    Typical Fall Time (ns) 15
    Typical Rise Time (ns) 60
    Typical Turn-Off Delay Time (ns) 22
    Typical Turn-On Delay Time (ns) 15
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Original Package SOIC N
    Pin Count 8
    Standard Package Method SOP
    Terminal Form Surface Mount
    Package Height 1.55(Max)
    Package Length 5(Max)
    Package Width 4(Max)
    PCB changed 8