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    SI4599DY-T1-GE3

    SKU: 127421
    Manufacturer: Vishay
    Trans MOSFET N/P-CH 40V 6.8A/5.8A 8-Pin SOIC N T/R
    4620 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Dual Dual Drain
    Process Technology TrenchFET
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 2
    Maximum Drain Source Voltage (V) 40
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 3@N Channel
    Operating Junction Temperature (°C) -55 to 150
    Maximum Continuous Drain Current (A) 6.8@N Channel
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 35.5@10V@N Channel
    Typical Gate Charge @ Vgs (nC) 11.7@10V
    Typical Gate Charge @ 10V (nC) 11.7@N Channel
    Typical Gate to Drain Charge (nC) 1.7@N Channel
    Typical Gate to Source Charge (nC) 1.9@N Channel
    Typical Reverse Recovery Charge (nC) 14@N Channel
    Typical Input Capacitance @ Vds (pF) 640@20V@N Channel
    Typical Reverse Transfer Capacitance @ Vds (pF) 41@20V@N Channel
    Minimum Gate Threshold Voltage (V) 1.4@N Channel
    Typical Output Capacitance (pF) 73@N Channel
    Maximum Power Dissipation (mW) 2000
    Typical Fall Time (ns) 9
    Typical Rise Time (ns) 10
    Typical Turn-Off Delay Time (ns) 15
    Typical Turn-On Delay Time (ns) 7
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Maximum Power Dissipation on PCB @ TC=25°C (W) 2
    Maximum Pulsed Drain Current @ TC=25°C (A) 20
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W) 120
    Typical Diode Forward Voltage (V) 0.78@N Channel
    Typical Gate Plateau Voltage (V) 3
    Typical Reverse Recovery Time (ns) 19@N Channel
    Maximum Diode Forward Voltage (V) 1.2
    Minimum Gate Resistance (Ohm) 0.5@N Channel
    Maximum Gate Resistance (Ohm) 4.5@N Channel
    Maximum Positive Gate Source Voltage (V) 20
    Maximum Continuous Drain Current on PCB @ TC=25°C (A) 5.6@N Channel
    Original Package SOIC N
    Pin Count 8
    Standard Package Method SOP
    Terminal Form Surface Mount
    Package Height 1.55(Max)
    Package Length 5(Max)
    Package Width 4(Max)
    PCB changed 8
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Dual Dual Drain
    Process Technology TrenchFET
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 2
    Maximum Drain Source Voltage (V) 40
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 3@N Channel
    Operating Junction Temperature (°C) -55 to 150
    Maximum Continuous Drain Current (A) 6.8@N Channel
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 35.5@10V@N Channel
    Typical Gate Charge @ Vgs (nC) 11.7@10V
    Typical Gate Charge @ 10V (nC) 11.7@N Channel
    Typical Gate to Drain Charge (nC) 1.7@N Channel
    Typical Gate to Source Charge (nC) 1.9@N Channel
    Typical Reverse Recovery Charge (nC) 14@N Channel
    Typical Input Capacitance @ Vds (pF) 640@20V@N Channel
    Typical Reverse Transfer Capacitance @ Vds (pF) 41@20V@N Channel
    Minimum Gate Threshold Voltage (V) 1.4@N Channel
    Typical Output Capacitance (pF) 73@N Channel
    Maximum Power Dissipation (mW) 2000
    Typical Fall Time (ns) 9
    Typical Rise Time (ns) 10
    Typical Turn-Off Delay Time (ns) 15
    Typical Turn-On Delay Time (ns) 7
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Maximum Power Dissipation on PCB @ TC=25°C (W) 2
    Maximum Pulsed Drain Current @ TC=25°C (A) 20
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W) 120
    Typical Diode Forward Voltage (V) 0.78@N Channel
    Typical Gate Plateau Voltage (V) 3
    Typical Reverse Recovery Time (ns) 19@N Channel
    Maximum Diode Forward Voltage (V) 1.2
    Minimum Gate Resistance (Ohm) 0.5@N Channel
    Maximum Gate Resistance (Ohm) 4.5@N Channel
    Maximum Positive Gate Source Voltage (V) 20
    Maximum Continuous Drain Current on PCB @ TC=25°C (A) 5.6@N Channel
    Original Package SOIC N
    Pin Count 8
    Standard Package Method SOP
    Terminal Form Surface Mount
    Package Height 1.55(Max)
    Package Length 5(Max)
    Package Width 4(Max)
    PCB changed 8