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    SI4465ADY-T1-E3

    SKU: 85012
    Manufacturer: Vishay
    Trans MOSFET P-CH 8V 13.7A 8-Pin SOIC N T/R
    10690 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status NRND
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single Quad Drain Triple Source
    Process Technology TrenchFET
    Channel Mode Enhancement
    Channel Type P
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 8
    Maximum Gate Source Voltage (V) ±8
    Maximum Gate Threshold Voltage (V) 1
    Maximum Continuous Drain Current (A) 13.7
    Maximum Drain Source Resistance (mOhm) 9@4.5V
    Typical Gate Charge @ Vgs (nC) 55@4.5V
    Typical Gate to Drain Charge (nC) 10
    Typical Gate to Source Charge (nC) 6
    Typical Reverse Recovery Charge (nC) 81
    Typical Output Capacitance (pF) 1300
    Maximum Power Dissipation (mW) 3000
    Typical Fall Time (ns) 112
    Typical Rise Time (ns) 170
    Typical Turn-Off Delay Time (ns) 168
    Typical Turn-On Delay Time (ns) 33
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Original Package SOIC N
    Pin Count 8
    Standard Package Method SOP
    Terminal Form Surface Mount
    Package Height 1.55(Max)
    Package Length 5(Max)
    Package Width 4(Max)
    PCB changed 8
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status NRND
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single Quad Drain Triple Source
    Process Technology TrenchFET
    Channel Mode Enhancement
    Channel Type P
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 8
    Maximum Gate Source Voltage (V) ±8
    Maximum Gate Threshold Voltage (V) 1
    Maximum Continuous Drain Current (A) 13.7
    Maximum Drain Source Resistance (mOhm) 9@4.5V
    Typical Gate Charge @ Vgs (nC) 55@4.5V
    Typical Gate to Drain Charge (nC) 10
    Typical Gate to Source Charge (nC) 6
    Typical Reverse Recovery Charge (nC) 81
    Typical Output Capacitance (pF) 1300
    Maximum Power Dissipation (mW) 3000
    Typical Fall Time (ns) 112
    Typical Rise Time (ns) 170
    Typical Turn-Off Delay Time (ns) 168
    Typical Turn-On Delay Time (ns) 33
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Original Package SOIC N
    Pin Count 8
    Standard Package Method SOP
    Terminal Form Surface Mount
    Package Height 1.55(Max)
    Package Length 5(Max)
    Package Width 4(Max)
    PCB changed 8