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    SI4378DY-T1-E3

    SKU: 42655
    Manufacturer: Vishay
    Trans MOSFET N-CH 20V 19A 8-Pin SOIC N T/R
    380 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status Obsolete
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single Quad Drain Triple Source
    Process Technology TrenchFET
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 20
    Maximum Gate Source Voltage (V) ±12
    Maximum Gate Threshold Voltage (V) 1.8
    Maximum Continuous Drain Current (A) 19
    Maximum Drain Source Resistance (mOhm) 2.7@4.5V
    Typical Gate Charge @ Vgs (nC) 55@4.5V
    Typical Gate to Drain Charge (nC) 10
    Typical Gate to Source Charge (nC) 16
    Typical Input Capacitance @ Vds (pF) 8500@10V
    Typical Output Capacitance (pF) 1250
    Maximum Power Dissipation (mW) 3500
    Typical Fall Time (ns) 50
    Typical Rise Time (ns) 65
    Typical Turn-Off Delay Time (ns) 140
    Typical Turn-On Delay Time (ns) 85
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Original Package SOIC N
    Pin Count 8
    Standard Package Method SOP
    Terminal Form Surface Mount
    Package Height 1.55(Max)
    Package Length 5(Max)
    Package Width 4(Max)
    PCB changed 8
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status Obsolete
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single Quad Drain Triple Source
    Process Technology TrenchFET
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 20
    Maximum Gate Source Voltage (V) ±12
    Maximum Gate Threshold Voltage (V) 1.8
    Maximum Continuous Drain Current (A) 19
    Maximum Drain Source Resistance (mOhm) 2.7@4.5V
    Typical Gate Charge @ Vgs (nC) 55@4.5V
    Typical Gate to Drain Charge (nC) 10
    Typical Gate to Source Charge (nC) 16
    Typical Input Capacitance @ Vds (pF) 8500@10V
    Typical Output Capacitance (pF) 1250
    Maximum Power Dissipation (mW) 3500
    Typical Fall Time (ns) 50
    Typical Rise Time (ns) 65
    Typical Turn-Off Delay Time (ns) 140
    Typical Turn-On Delay Time (ns) 85
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Original Package SOIC N
    Pin Count 8
    Standard Package Method SOP
    Terminal Form Surface Mount
    Package Height 1.55(Max)
    Package Length 5(Max)
    Package Width 4(Max)
    PCB changed 8